1. Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films.
- Author
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Chen, Liang, Xia, Yidong, Liang, Xuefei, Yin, Kuibo, Yin, Jiang, Liu, Zhiguo, and Chen, Yong
- Subjects
FERROELECTRIC RAM ,MAGNETIC memory (Computers) ,OPTICAL bistability ,FERROELECTRIC crystals ,FERROELECTRIC devices - Abstract
An organic bistable device with a structure Cu/Cu
2 S/copperphthalocyanine (Cu-Pc)/Pt was fabricated. Compared to the single layer organic device composed of Cu/Cu-Pc/Pt, the bilayer devices were observed to show distinct bistability with the resistance ratio of the off/on states up to 107 and low switch voltage (0.75–0.85 V). At least 105 switching cycles were achieved in the “write-read-erase-read” cycle voltage. The filament mechanism for the device is supported by the “metallic” behavior in their temperature dependence of the resistance in the on state. Such a memory device provides a promising structure for the nonvolatile memory. [ABSTRACT FROM AUTHOR]- Published
- 2007
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