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The overpoling effect of alternating current poling (ACP) was studied on [001]-orientated rhombohedral Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 (PMN-0.26PT) single crystals. Our experimental results showed that the property enhancement from the ACP was remarkable only when the poling cycle number (NL) was kept low. When ACP was continued after the saturation, dielectric and piezoelectric properties gradually dropped down to traditional direct current poled levels or even lower. Such a decrease in material properties caused by the large NL during ACP was defined as the "overpoling effect of ACP" in this study. The following lattice symmetry and domain structure characterization studies were performed through x-ray diffraction (XRD) and piezoelectric force microscopy (PFM) to find the origin of the overpoling effect. The XRD measurements combined with temperature dependence of dielectric properties demonstrated that the field-induced phase transition continued when the samples became overpoled. Further PFM measurements illustrated that the domain density of the overpoled ACP sample was significantly lower than that of the normal one, while the "2R" domain configuration was maintained through the ACP process. In addition, the hysteresis loop characterization indicated large decreases in the coercive fields. The discovered overpoling effect of ACP could help us understand the mechanisms of ACP and optimize the ACP process. [ABSTRACT FROM AUTHOR]

Alternating current poling (ACP) was performed on Gen III relaxor-PT Mn-doped Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (Mn: PIN-PMN-PT) single crystals with the poling direction of [001]. Experimental results proved that ACP could bring property enhancement to both k31 and k33 mode crystals. Compared to those from traditional direct current poling (DCP), ACP with the optimized conditions (20 kV/cm, 0.1 Hz, and 20 cycles) enhanced the dielectric and piezoelectric properties of k31-mode mode crystals by more than 30%, where the enhanced free dielectric constant and piezoelectric coefficient d33 reached 5300 and 1750 pC/N, respectively. Furthermore, replacing DCP with ACP could increase the advantages of Gen III relaxor-PT. The coupling factors k31 and k33 were enhanced to 0.472 and 0.915, the mechanical quality factor Qm was enhanced by 17%, and the depoling temperature was raised by 17 °C to 123 °C. In the following mechanism study, in situ x-ray diffraction (XRD) combined with the temperature-dependent dielectric constant measurement proved the introduction of the monoclinic phases after ACP, while piezoresponse force microscopy (PFM) observation showed "2R"-like "2M" domain morphologies in ACP single crystals. Both these intrinsic and extrinsic factors are believed to be the keys to the mechanisms of property enhancement behind ACP. This study proved that ACP is an effective property enhancement method suitable for Gen III relaxor-PT single crystals and will promote its applications in high-temperature and high-power devices. [ABSTRACT FROM AUTHOR]

Alternating current (electric field) poling (ACP) was applied on [001]-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-0.3PT) single crystal samples with dimensions of 5 × 1.25 × 1.25 mm3 (with electrodes on the 1.25 × 1.25 mm2 surfaces), and the influence of ACP frequency (fACP) was studied. Compared to those from traditional direct (electric field) poling samples, the piezoelectric coefficient (d33) and free dielectric constant (εT33/ε0) of ACP samples could gain up to a 67% increase to 3200 pC/N and 10 500, respectively. The influence of fACP was studied on two main aspects: saturated properties and dynamic saturation process. In general, ACP samples with lower fACP had higher saturated d33, εT33/ε0, and coupling factor k33, as well as lower dielectric loss and faster saturation speed. The ACP dynamics during the saturation process were studied by measuring the polarization-vs-electric field hysteresis loops (P-E loops). The P-E loops illustrated that the coercive field of ACP samples could be further tuned from 1.84 kV/cm to 3.03 kV/cm by changing fACP (0.1–10 Hz). This work demonstrated the enormous potential of ACP optimization in relaxor-PT single crystal-based low-frequency transducer applications. [ABSTRACT FROM AUTHOR]

In this work, the piezoelectric and dielectric properties of [001]-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystals under alternating current poling (ACP) at different temperatures were studied. The piezoelectric coefficients (d33 ∼ 1930 pC/N, d31 ∼ −850 pC/N) and free dielectric permittivity (εT33/ε0 ∼ 7570) reached their highest values when the poling temperature (Tpoling) was 70 °C. Compared with traditional direct current electric field poling at 20 °C, 70 °C-ACP samples showed an enhancement of 40%, 35%, and 49% for d33, d31, and εT33/ε0, respectively. Meanwhile, d33 and εT33/ε0 were enhanced by about 9% when Tpoling increased from 20 °C to 70 °C under ACP, while d31 remained the same value and the dielectric loss was lowered from 0.29% to 0.22%. Moreover, ACP samples with different Tpoling have similar electromechanical coupling factors (k31 ∼ 0.44, kt ∼ 0.60). A discussion of the mechanism for the ACP enhancement was based on the domain observation using piezoresponse force microscopy, and the results showed that the domain densities of ACP samples with different Tpoling were positively correlated with their piezoelectric properties. This work demonstrated the enormous potential of ACP optimization for relaxor-PT single crystal applications. [ABSTRACT FROM AUTHOR]

Diffuse scattering and relaxor behavior in Na0.5Bi0.5TiO3 (NBT) and NBT-5.6 at. %BaTiO3 (NBT-5.6%BT) were investigated. X-ray diffraction revealed two types of diffuse scattering in NBT: (i) broad and (ii) asymmetric L-shaped. After modification with 5.6%BT, the broad diffuse scattering patterns became narrow, and the asymmetric L-shaped ones were replaced by symmetric ones. The symmetric diffuse scattering in NBT-5.6%BT disappeared with increasing dc electric field (E) for E ≥ 9.5 kV/cm where the frequency dispersion in the dielectric constant disappeared. These results demonstrate that the relaxor characteristics are directly correlated with the diffuse scattering and the presence polar nano-regions. [ABSTRACT FROM AUTHOR]

The crystallographic dependence of the DC electric (E) field induced strain and phase transition in Na0.5Bi0.5TiO3-5.6%BaTiO3 (NBT-5.6%BT) single crystals has been investigated. An induced transition between pseudocubic and tetragonal structures was observed under E = 10 kV/cm for fields applied along the <001> direction, whereas an induced transition between pseudocubic and rhombohedral structures was observed when the E-field was applied along <111>. Our results show near the morphotropic phase boundary that the phase stability of NBT-x%BT is dependent on the crystallographic direction along which E was applied. [ABSTRACT FROM AUTHOR]

Additionally, the supplementary paragraph on page 4 of the published article should be corrected to cite Fig. "See the supplementary material for the detailed property enhancement from ACP (Table S1); the effect of different f SB ACP sb on the saturated properties (Fig. Chang, Y. Yamashita, A. R. Paterson, J. Jones, and X. Jiang, Appl. Phys. [Extracted from the article]

The dielectric, ferroelectric, and electric field-induced strain response of [001]-and [101]-oriented 0.944Na0.5Bi0.5TiO3-0.056BaTiO3 (0.944NBT-0.056BT) single crystals were investigated as a function of temperature and dc bias (E). An ultrahigh electromechanical response with large amplitude longitudinal piezoelectric coefficients as high as d33 = 2500 pm/V was found in [001]PC oriented 0.944NBT-0.056BT single crystals near a depolarization temperature of Td = 130 °C. In-situ XRD revealed that the enhanced piezoelectric properties resulted from a polarization extension between a polar pseudocubic phase with a slight tetragonal (P4bm) distortion and a polar tetragonal one with a large tetragonal distortion of c/a = 1.02. Our findings indicate a potential approach to high performance lead-free piezoelectrics, via polarization extension. [ABSTRACT FROM AUTHOR]