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Your search keyword '"Miaomiao Wang"' showing total 2 results
Start Over Author "Miaomiao Wang" Publisher american institute of physics
2 results on '"Miaomiao Wang"'

1. Inelastic Electron Tunnelling Spectroscopy (IETS) of High-k Dielectrics.

Author

Ma, T. P., Wei He, and Miaomiao Wang

Subjects
TUNNELING spectroscopy, SPECTRUM analysis, PARTICLES (Nuclear physics), ELECTRIC insulators & insulation, MICROMECHANICS, COMPOSITE materials
Abstract

It is shown that inelastic electron tunnelling spectroscopy (IETS) is a powerful technique to study microstructures and defects in Metal-Insulator-Semiconductor (MIS) systems where the insulator is sufficiently thin to allow significant tunnelling current to flow through. The information that may be revealed by IETS contains a wide variety of inelastic interactions, including interactions with phonons, various bonding vibrations, bonding defects, and impurities. Examples will be given to illustrate the capabilities of this technique. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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2. Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps.

Author

Miaomiao Wang, Wei He, and Ma, T. P.

Subjects
*SPECTRUM analysis, *DIELECTRICS, *ELECTRIC insulators & insulation, *ENERGY levels (Quantum mechanics), *QUANTUM theory, *DIELECTRIC devices
Abstract

It will be demonstrated that the electron tunneling spectroscopy (ETS), obtained by taking the second derivative of the current-voltage (I–V) characteristic of a tunnel barrier, is an effective technique to probe traps in ultra-thin gate dielectrics where significant tunneling currents flow. By taking the electron tunneling spectra in both polarities, one can determine the locations and energy levels of traps that appear in the ETS spectra. The procedure for the above and the associated derivation will be presented. Examples are shown to demonstrate the use of ETS to track the evolution of traps in high-k gate dielectrics under electrical stress. [ABSTRACT FROM AUTHOR]

Published
2005
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