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Analyzes the fractional quantum Hall effect in silicon/silicon germanium (Si/SiGe) heterostructures. Details on the germanium content of the supply layers; Overview of the magnetotransport measurements of Si/SiGe heterostructures; Correlation of the density of dislocations with the mobility of electron in the Si channel.

Investigates the electron mobility in modulation-doped silicon/silicon germanide heterostructures grown by vacuum chemical vapor deposition. Presence of interface roughness in samples; Correlation between the thickness of buffer layer and electron mobility; Impact of background impurities on electron mobility.

Examines the significance of the electron transport properties of silicon (Si) and silicon germinide (SiGe) heterostructures. Occurrence of biaxial tensile strain following the growth of Si on relaxed SiGe; Influence of sheet resistance reduction on Si and SiGe structures; Effects of electron transport on the use of thin spaces in transistor application.

Examines strain relaxation and mosaic structure in relaxed silicon germanide (SiGe) alloy layers. Use of high-resolution x-ray diffraction in characterizing strained SiGe layers and superlattices; Determination of the importance of mosaic structure; Discussion on the effect of threading dislocations on the x-ray peak widths.