24 results on '"Queisser, H.-J."'
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2. Luminescence properties of (GaAs)l(AlAs)m superlattices with (l,m) ranging from 1 to 73.
3. Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy.
4. Photoluminescence of Cu-Doped Gallium Arsenide.
5. p-Type Surface Layers in Ion-Bombarded Silicon.
6. Diffusion-Induced Dislocations in Silicon.
7. Structure and Origin of Stacking Faults in Epitaxial Silicon.
8. Slip Patterns on Boron-Doped Silicon Surfaces.
9. Band-to-band recombination in Ga0.5In0.5P.
10. Sign of the Hall Coefficient in a Relaxation-Case Semiconductor.
11. X-Ray Observations of Diffusion-Induced Dislocations in Silicon.
12. Gallium arsenide p+-ν diodes under hydrostatic pressure.
13. Comments on ``Transition from Ohmic to Space-Charge-Limited Conduction''.
14. Photovoltaic Effect of Gold in Silicon.
15. Photoluminescence of Silicon-Compensated Gallium Arsenide.
16. Growth of Lattice Defects in Silicon during Oxidation.
17. Erratum: Structure and Origin of Stacking Faults in Epitaxial Silicon.
18. Stacking Faults in Epitaxial Silicon.
19. Low-Frequency Fluctuations of a GaAs Diode in the Relaxation Regime.
20. Profiling of deep impurities by persistent photocurrent measurements.
21. Luminescence in slipped and dislocation-free laser-annealed silicon.
22. In situ x-ray topography of epitaxial Ge layers during growth.
23. High-resolution direct-display x-ray topography.
24. EXTRINSIC-INTRINSIC STACKING-FAULT PAIRS IN EPITAXIAL SILICON.
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