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GaAs1-zNz–GaAs1-ySby type-II “W” structures were studied for long wavelength (1300–1600 nm) applications. These structures were grown on a GaAs substrate using metal-organic vapor phase epitaxy. The antimony and nitrogen compositions in the pseudomorphic GaAs1-ySby and GaAs1-zNz were estimated by separately growing GaAs1-ySby–GaAs and GaAs1-zNz–GaAs strained superlattices. X-ray studies indicate that a maximum of y=0.37 antimony can be incorporated in the pseudomorphic GaAs1-ySby film grown using triethyl gallium (TEGa), trimethyl antimony (TMSb) and arsine (AsH3) at the growth temperatures employed. A postgrowth anneal was used to improve the emission intensity but leads to shifts in the emission wavelength. An emission wavelength as long as 1.47 μm was realized using a GaAs1-zNz–GaAs1-ySby–GaAs1-zNz structure. [ABSTRACT FROM AUTHOR]

We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ~107cm-2. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm² /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market. [ABSTRACT FROM AUTHOR]