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In this Letter, we investigated the photo-response of multi wall carbon nanotube-based composites obtained from in situ thermal evaporation of noble metals (Au, Ag, and Cu) on the nanotube films. The metal deposition process produced discrete nanoparticles on the nanotube outer walls. The nanoparticle-carbon nanotube films were characterized by photo-electrochemical measurements in a standard three electrode cell. The photocurrent from the decorated carbon nanotubes remarkably increased with respect to that of bare multiwall tubes. With the aid of first-principle calculations, these results are discussed in terms of metal nanoparticle-nanotube interactions and electronic charge transfer at the interface. [ABSTRACT FROM AUTHOR]

Different amounts of single wall carbon nanotubes (SWCNTs) have been sprayed on amorphous silicon substrates to form Schottky barrier solar cells. The measured external quantum efficiency showed a spectral behavior depending on the SWCNT network optical transparency, presenting a maximum up to 35% at a wavelength of about 460 nm. Ultrathin network of SWCNTs acts as semitransparent electrode and forms Schottky barrier with amorphous silicon, enabling new generation low cost amorphous silicon based solar cells. Numerical simulations show a poor efficiency of SWCNT contacts in collecting holes suggesting that improvement in contact quality is needed to further improve solar cell efficiency. [ABSTRACT FROM AUTHOR]

We report on the significant generation of photocurrent (PC) from planar devices built from the drop casting of UV-laser-synthesized single-wall-carbon-nanotubes (SWCNTs) onto n-Si substrate. These SWCNTs/n-Si hybrid devices are shown to generate PC with external quantum efficiencies (EQE) reaching up to ∼10%. Their EQE has been optimized by controlling the amount of deposited SWCNTs, and is shown to be significantly enhanced over all the spectral range with a pronounced boost (up to ∼25× times) around 460 nm. The extension of the photoresponse of these devices toward UV correlates well with the absorbance of SWCNTs. [ABSTRACT FROM AUTHOR]

We report photocurrent generation in entangled networks of multiwall-carbon nanotubes (MWCNTs) grown on TiN/Si substrates by an all-laser process. By integrating these MWCNTs into planar devices, we demonstrate that they generate photocurrent over all the visible and near-ultraviolet range, with maximum efficiency around 420 nm. Photocurrent is obtained even at zero applied voltage, pointing to a true photovoltaic (PV) effect. The extracted photocurrent as a function of applied voltage exhibits nonlinear behavior for voltages ≥2 V, suggesting that the devices do not behave as pure photoresistances. Other mechanisms (e.g., Schottky barriers imbalance) are invoked to describe current flow in these PV devices. [ABSTRACT FROM AUTHOR]

Photocurrent generation of nanometric Ge dots has been investigated by using electrochemical measurements. Photocurrent features have been ascribed, for large Ge dots, to Ge bulk direct electronic transitions at L and X points as evidenced by their close correspondence with the optical absorption coefficient. A blueshift of the photocurrent features has been detected by reducing the Ge dot size. These changes have been interpreted as due to quantum confinement effect. This result suggests that Ge dots could be applied in photovoltaic nanodevices and quantum dot based lasers. [ABSTRACT FROM AUTHOR]

The authors demonstrate the ability of multiwall carbon nanotubes to generate photocurrents in the near ultraviolet and visible spectral ranges using electrochemical photocurrent measurements. The photogenerated current depends on the excitation wavelength similar to that for single wall carbon nanotubes. Its intensity and modulation can be related to the carbon nanotubes morphology. The maximum photon-to-current conversion efficiency is approximately 7%, about 50 times higher than that reported for single wall carbon nanotubes. This result is of particular relevance for photovoltaic nanodevices and solar energy conversion applications. [ABSTRACT FROM AUTHOR]

The spontaneous formation of nanometric and highly dense (∼3×1012 cm-2) Ge droplets on thin SiO2 film on Si(001) is investigated by scanning tunneling microscopy and spectroscopy. Ge dots have been grown by depositing Ge on the clean SiO2 surface at room temperature and then annealing the sample at 500 °C. Ge dots appear to be free of germanium oxides and characterized by a flat surface with the onset of {113} faceting. I-V curves show that they have an energy gap of approximately 1.8 eV, well above that of bulk Ge. Fabrication of nanometer-sized, highly dense pure Ge droplets is very promising for nanoelectronics applications. [ABSTRACT FROM AUTHOR]

The electronic structure of free-standing parallel and braided bundles of single-wall carbon nanotubes (∼1.2 nm diameter) was probed by transmission electron microscopy and electron energy loss spectroscopy. The observed dramatic changes in the carbon K(1s) near-edge structures are attributed to the tubes’ structural packing in bundles which consequently alters their electronic structure. The π*- and the σ*-states are shown to be strongly affected by the way the tubes are packed in the bundles (i.e., parallel, braided, turned, or twisted). [ABSTRACT FROM AUTHOR]

Transmission electron microscopy (TEM), electron energy loss near edge structures (EELNES) and scanning tunneling microscopy (STM) were used to distinguish silicon nanotubes (SiNT) among the reaction products of a gas phase condensation synthesis. TEM images exhibit the tubular nature with a well-defined wall. The EELNES spectra performed on each single nanotube show that they are constituted by nonoxidized silicon atoms. STM images show that they have diameter ranging from 2 to 35 nm, have an atomic arrangement compatible with a puckered structure and different chiralities. Moreover, the I-V curves showed that SiNT can be semiconducting as well as metallic in character. [ABSTRACT FROM AUTHOR]

Straight and coiled single-wall carbon nanotubes (SWCNTs) synthesized by laser vaporization were dispersed on highly oriented pyrolitic graphite. Their morphology and electrical properties were investigated by scanning tunneling microscopy (STM). STM images revealed that the SWCNTs (either straight or coiled) often self-organize into bundles of two or more tubes and are rarely found alone. The conductance measured along a periodically coiled CNT was found to increase at locations where the CNT is squeezed, while it decreases significantly in unsqueezed regions characterized by an unperturbed hexagonal network. This provides experimental evidence of significant conductance modulation along a one-dimensional system on the nanometer scale. [ABSTRACT FROM AUTHOR]

Tungsten tips obtained through electrochemical etching have been characterized by scanning electron microscopy, scanning Auger microscopy, and scanning tunneling microscopy. While such tips resulted to be very sharp, a thick oxide layer (∼10 nm) is present at the apex. High-vacuum annealing at 1800 K removes most of such oxide. [ABSTRACT FROM AUTHOR]