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In this study, in situ synchrotron x-ray diffraction was used to investigate a high-temperature phase transition in tensile-strained epitaxial NaNbO3/(110)DyScO3 films. A ferro-to-ferroelectric phase transition was found in the temperature range between 230 and 350 °C, with a very pronounced thermal hysteresis. While at room temperature the well known monoclinic a1a2 in-plane ferroelectric phase is present, here, a slightly disturbed orthorhombic ferroelectric a1/a2 phase with exclusive in-plane polarization was found at high temperatures. This phase appeared in four variants, indicating the occurrence of four types of superdomains. The orthorhombic symmetry and the corresponding domain morphology observed at high temperatures showed a striking similarity to K0.9Na0.1NbO3 thin films grown on a (110) NdScO3 substrate. [ABSTRACT FROM AUTHOR]

The three-dimensional arrangement and orientation of domain walls in ferroelectric K0.9Na0.1NbO3/(110)NdScO3 epitaxial thin films were investigated at different temperatures both experimentally by means of piezoresponse force microscopy and three-dimensional x-ray diffraction and theoretically by three-dimensional phase-field simulations. At room temperature, a well-ordered herringbone-like domain pattern appears in which there is a periodic arrangement of a1a2/MC monoclinic phases. Four different types of domain walls are observed, which can be characterized by out-of-plane tilt angles of ±45° and in-plane twist angles of ±21°. For the orthorhombic high-temperature phase, a periodic a1/a2 stripe domain pattern with exclusive in-plane polarization is formed. Here, two different types of domain walls are observed, both of them having a fixed out-of-plane domain wall angle of 90° but distinguished by different in-plane twist angles of ±45°. The experimental results are fully consistent with three-dimensional phase-field simulations using anisotropic misfit strains. The qualitative agreement between the experiment and the theory applies, in particular, to the wide phase transition range between about 180 °C and 260 °C. In this temperature range, a complex interplay of coexisting monoclinic a1a2/MC and orthorhombic a1/a2 phases takes place. [ABSTRACT FROM AUTHOR]

A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rate and maintain the step-flow growth mode, wherein the enhanced diffusion channel due to the formation of a Ga adlayer was proposed to be the possible growth mechanism. Si doping allowed precise control of the n-type conductivity of the films with electron concentrations ranging from 1.5 × 1017 to 1.5 × 1019 cm−3 and corresponding mobilities from 144 to 21 cm2 V−1 s−1, as revealed by Hall effect measurements at room temperature. Secondary ion mass spectrometry confirmed homogeneous Si doping through the film and a one-to-one correlation between the Si concentration and the electron concentration. Low defect density in the films was determined by x-ray diffraction measurements. The demonstration of a high growth rate process of β-Ga2O3 films with μm level thickness and smooth surface morphology via MOVPE is critical for high power electronics with vertical device architecture. [ABSTRACT FROM AUTHOR]

In this work, we demonstrate that extremely thin strain-engineered K0.7Na0.3NbO3 (KNN) films are ideal candidates for highly sensitive and also potentially selective surface acoustic wave (SAW) sensor applications. The strength of the use of these films in SAW sensors is based on their piezoelectric properties and their thinness. The latter leads to a strong concentration of the SAW energy at the very surface of the sensor's delay line and the generation of higher harmonics with significant amplitudes. Thin epitaxial films of typically 30 nm in thickness are grown via liquid-delivery spin metal-organic vapor phase epitaxy on different (110)-oriented scandate substrates (TbScO3 and GdScO3). The epitaxial strain is induced by the lattice mismatch between a substrate and a film. The SAW signal of thin KNN films and the resulting sensitivity of an SAW thin KNN film sensor are compared with conventional bulk SAW sensors based on LiNbO3 (LN) using identical electrode designs for the generation and detection of the SAW for both systems. Compared to the conventional LN SAW sensor, our KNN-based sensor shows a sensitivity that is approximately 14 times higher. This was achieved using only the third and fifth harmonics. Using even higher harmonics, the improvement could potentially be boosted up to a factor > 40. Moreover, we showed that simultaneous sensor recording of mass loading at different harmonics is possible with the KNN sensor. Similar to other sensor concepts, the resulting multiple signals might provide a fingerprint of the detected material and, thus, lead to a selective detection of the mass load. [ABSTRACT FROM AUTHOR]

NbO2 is a promising candidate for resistive switching devices due to an insulator-metal transition above room temperature, which is related to a phase transition from a distorted rutile structure to an undistorted one. However, the electrical resistivity of the NbO2 thin films produced so far has been too low to achieve high on-off switching ratios. Here, we report on the structural, electrical, and optical characterization of single-crystalline NbO2 (001) thin films grown by pulsed laser deposition on MgF2 (001) substrates. An annealing step reduced the full width at half maximum of the NbO2 (004) x-ray Bragg reflection by one order of magnitude, while the electrical resistivity of the films increased by two orders of magnitude to about 1 kΩcm at room temperature. Temperature-dependent resistivity measurements of an annealed sample revealed that below 650 K, two deep-level defects with activation energies of 0.25 eV and 0.37 eV dominate the conduction, while above 650 K, intrinsic conduction prevails. Optical characterization by spectroscopic ellipsometry and by absorption measurements with the electric field vector of the incident light perpendicular to the c-axis of the distorted rutile structure indicates the onset of fundamental absorption at about 0.76 eV at room temperature, while at 4 K, the onset shifts to 0.85 eV. These optical transitions are interpreted to take place across the theoretically predicted indirect bandgap of distorted rutile NbO2. [ABSTRACT FROM AUTHOR]