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The unipolar resistive switching behavior of Pt/LixZn1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio reaches 108 due to the minimized leakage current in the high-resistance state (HRS) at 6 at. % Li dopants. The dominant conduction mechanisms are explained in terms of Ohmic behavior and Poole-Frenkel (PF) emission. The coefficient r of the PF emission in the HRS is evaluated to confirm that the total number of defects in LixZn1-xO films decreases with increasing Li content. [ABSTRACT FROM AUTHOR]

A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices. [ABSTRACT FROM AUTHOR]

Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen. [ABSTRACT FROM AUTHOR]