1. 7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management.
- Author
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Xu, Yibo, Vangipuram, Vijay Gopal Thirupakuzi, Talesara, Vishank, Cheng, Junao, Zhang, Yuxuan, Hashimoto, Tadao, Letts, Edward, Key, Daryl, Zhao, Hongping, and Lu, Wu
- Subjects
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BREAKDOWN voltage , *ELECTRON mobility , *DIELECTRIC materials , *DIODES , *GALLIUM nitride , *PERMITTIVITY - Abstract
Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm 2 and a Baliga figure of merit of 22 GW/ cm 2 . [ABSTRACT FROM AUTHOR]
- Published
- 2023
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