1. Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2.
- Author
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Shimeng Yu, Jeyasingh, Rakesh, Yi Wu, and Wong, H.-S. Philip
- Subjects
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ELECTRONIC noise , *TRANSITION metal oxides , *SWITCHING theory , *ELECTRIC resistance , *HAFNIUM compounds , *SOUND measurement , *FERROELECTRIC RAM - Abstract
Low-frequency noise measurements were performed on HfO2-based bipolar resistive switching memory devices. A 1/fα DC noise power spectral density was observed with α ∼ 1 for a low resistance state and α ∼ 2 for a high resistance state. We developed an electron tunneling model to elucidate the conduction process, which showed that the 1/fα behavior was due to the distribution of relaxation times of electron tunneling between the electrodes and the traps in the conducting filaments. The transition of the slope index α from 1 to 2 at a certain cutoff frequency indicates that there is a tunneling gap formed between electrodes and the residual of the conductive filaments in the high resistance state. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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