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Occupational exposure to carcinogens of increasing cancer risk have been extensively suggested. A robust assessment of these evidence is needed to guide public policy and health care. We aimed to classify the strength of evidence for associations of 13 occupational carcinogens (OCs) and risk of cancers. We searched PubMed and Web of Science up to November 2022 to identify potentially relevant studies. We graded the evidence into convincing, highly suggestive, suggestive, weak, or not significant according to a standardized classification based on: random-effects p value, number of cancer cases, 95% confidence interval of largest study, heterogeneity between studies, 95% prediction interval, small study effect, excess significance bias and sensitivity analyses with credibility ceilings. The quality of meta-analysis was evaluated by AMSTAR 2. Forty-eight articles yielded 79 meta-analyses were included in current umbrella review. Evidence of associations were convincing (class I) or highly suggeastive (class II) for asbestos exposure and increasing risk of lung cancer among smokers (RR = 8.79, 95%CI: 5.81–13.25 for cohort studies and OR = 8.68, 95%CI: 5.68–13.24 for case-control studies), asbestos exposure and increasing risk of mesothelioma (RR = 4.61, 95%CI: 2.57–8.26), and formaldehyde exposure and increasing risk of sinonasal cancer (RR = 1.68, 95%CI: 1.38–2.05). Fifteen associations were supported by suggestive evidence (class III). In summary, the current umbrella review found strong associations between: asbestos exposure and increasing risk of lung cancer among smokers; asbestos exposure and increasing risk of mesothelioma; and formaldehyde exposure and higher risk of sinonasal cancer. Other associations might be genuine, but substantial uncertainty remains. [Display omitted] • Asbestos was associated with increasing risk lung cancer and mesothelioma. • Formaldehyde was associated with increasing risk of sinonasal cancer. • Efforts should be targeted to deter asbestos and formaldehyde exposure. [ABSTRACT FROM AUTHOR]

The utilization of conductive hydrogels, particularly in the domain of wearable technology, has garnered substantial attention. However, the limited mechanical properties, low sensitivity, and lack of multifunctionality in conventional conductive hydrogels constrain their potential applications. Thus, the endeavor to develop conductive hydrogels with exceptional comprehensive performance remains a formidable challenge. In this investigation, chitosan quaternary ammonium salts and the conductive polymer poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) were employed as precursor materials, incorporating carboxylated cellulose nanofibers, to synthesize a novel double-crosslinked network hydrogel. The resulting hydrogel specimen exhibited noteworthy tensile strength (2.13 MPa), significantly enhanced elongation (547%), favorable strain sensitivity (Gauge Factor ranging from 0.91 to 9.78), and electrical self-healing capabilities. Additionally, it demonstrated accurate detection of subtle human movements and conversion of raw data into binary data. This research provides valuable insights into the advancement of conductive hydrogels for wearable soft electronics. TOC : A double cross-linked network structure hydrogel with CNF–C: synergistically enhanced mechanical properties and sensitivity of flexible strain sensors. [Display omitted] [ABSTRACT FROM AUTHOR]

Oxygen sensors, using organic-inorganic and all-inorganic lead halide perovskites, have demonstrated huge advantages in operating temperature, responding time, and reversing oxygen content detection. Nevertheless, the toxicity and instability issues hinder their wide application. In this work, for the first time, we report a sensitive fluorescence oxygen detector based on lead-free double perovskite Cs 2 AgBiBr 6 thin film. The sensor has a remarkable performance in terms of fast response time of ≈56 s, recovery time of ≈91 s, and a relatively low limit of detection (LOD) of 150 ppm. More importantly, the unencapsulated sensor still exhibits an obvious response at low oxygen concentrations after two-week storage in ambient, and the device also exhibits good humidity, light, and thermal stability. Consequently, the lead-free double perovskite (Cs 2 AgBiBr 6) will be promising environmentally friendly material in developing reversible, sensitive, high-efficiency, and stable perovskite oxygen sensors. [ABSTRACT FROM AUTHOR]

We consider how the device structure and the emitter properties determine the performance of near-infrared quantum dot based light-emitting diodes. The challenges and future prospects for such bright, stable and efficient devices are discussed. [Display omitted] Near-infrared (NIR) emitters are indispensable for telecommunication and medical applications. Colloidal semiconductor quantum dots offer plenty of advantages for NIR light-emitting diodes (LEDs) thanks to their size-dependent emission, high exciton binding energy, and low-cost solution processing. Here, we summarize the recent progress in the development of NIR quantum dot LEDs, focusing on how their device structure and emitter properties facilitate improvement of device performance. The challenges and opportunities associated with NIR quantum dot LEDs such as achieving the proper balance between the charge transport and exciton formation, enhancement of device stability, and improvement of device outcoupling efficiency are discussed. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) perovskite materials show enormous potential in optoelectronic applications owing to their exceptional thermal stability and unique lattice structures. However, research into anion-substituted 2D perovskites is relatively rare, particularly in the photoelectric information storage field. Here, an anion-based 2D perovskite Cs 2 Pb(SCN) 2 I 2 film with high orientation and high thermal-stability is achieved by simple low-temperature solution processing and the memristor of Al/Cs 2 Pb(SCN) 2 I 2 /FTO is established. The experimental evidence shows that: 1) In the absence of light irradiation, memristors present typical bipolar resistance switching behaviour with On/Off resistance ratio (>103) and reliable retention (>104 s); 2) By introducing light irradiation, it can achieve a more dependable memristor with decreased RS fluctuation and improved cycling endurance. In addition, by modifying the compliance current (I cc), it can realize multi-level storage function of memories with good high temperature endurance. Finally, the logic gate function is also demonstrated with these cells. The operational principles of memristor devices are comprised of the charge trapping and conductive filament mechanisms. The light irradiation reduces the ion migration barrier and enhances the conductivity of perovskite films, thus limiting the excessive growth of conductive filaments. This work offers the groundwork for creating anionic two-dimensional perovskite photoelectric memristor devices. [ABSTRACT FROM AUTHOR]

The surface tension of molten metals plays a key role in applications such as microfluidics, welding, and additive manufacturing. These are areas where there is an increasing emphasis on micro- and nano-scale systems, for which universal and scaling relationships are needed. We report a molecular dynamics-based analysis of the size-dependence of surface tension of molten metal droplets at the nanoscale, employing the Young-Laplace law. The superficial density peak in the surface transition layer is found to persist to the nanoscale. A novel curvature radius (R s*) based on the position of the superficial density peak is introduced to capture the effective surface of tension. This effective radius R s* is found to reflect accurately the intrinsic surface curvature of the droplet and thereby enable an accurate and predictive universal scaling formula for the behavior of specific surface tension at the nanoscale. These results shed new light on the surface behavior of liquid metals and provide a scaling formula that can be used for further experimental and theoretical analysis. [Display omitted] [ABSTRACT FROM AUTHOR]

Patterned metal systems to periodically modulated nanomultilayered architectures, with crystalline and/or amorphous states, has acted as an effective strategy for tuning desirable mechanical properties. While the spontaneous assembly offers an effective and promising path for constructing nanomultilayers, in high-entropy alloys (HEA) how to trigger such a barrier-free route still faces challenges. In this paper, the enthalpy-difference-guided strategy, incorporating Pt, was employed to induce spinodal decomposition for the barrier-free nanomultilayer structure in refractory HEA systems. Aiming at exploring the elastic and chemical interactions, three HEA films with different degrees of size mismatch δ (Zr-Nb-Ta-Mo-W, Zr-Hf-Nb-Ta-Mo, Zr-Hf-Nb-Cr-Mo systems) were fabricated as model systems. Contributed by differences in ΔH mix and δ , in each HEA film, certain-content Pt can trigger both spinodal decomposition and amorphization behavior, which lead to the barrier-free Pt-rich/Pt-lean nanomultilayers with different topological combinations: crystalline/crystalline and amorphous/amorphous. Compared to model HEAs, such barrier-free nanomultilayers can significantly improve the nanoindentation hardness. In HEA systems, tuning ΔH mix and δ simultaneously can assist the further understanding of the structural arrangements and the progress on the barrier-free nanomultilayered configuration for superior mechanical properties. [Display omitted] [ABSTRACT FROM AUTHOR]

The development of low-price and highly efficient catalysts for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) has always been challenging with regard to water splitting. Pyrrhotite Fe 7 S 8 has become a research hotspot due to its abundant reserves, high electrical conductivity and excellent catalytic activity. In general, introducing metal heteroatoms into transition metal sulfides (TMSs) can effectively enhance the activity and stability of TMSs. Herein, Co-doped pyrrhotite Fe 7 S 8 nanosheets were obtained by a straightforward two-step method consisting of hydrothermal treatment followed by subsequent heat treatment. Results from XPS analysis and contact angle measurements showed that doping optimized the chemical environment around iron atoms and enhanced the adsorption of water molecules on the surface of Fe 7 S 8 , thereby greatly improving the electrocatalytic efficiency of water electrolysis. Compared with other counterparts, Co 0 · 95 Fe 6 · 05 S 8 exhibited superior OER activity with an overpotential of 311 mV at a current density of 10 mA cm−2, and higher performance towards HER with an overpotential of 284 mV at 10 mA cm−2 in alkaline solution. In sum, Co 0 · 95 Fe 6 · 05 S 8 is promising as a bifunctional catalyst for water splitting under alkaline conditions. [ABSTRACT FROM AUTHOR]

The electric double layer (EDL) has been found to play a critical role in not only electric double-layer capacitors (EDLCs) but also batteries and electrocatalysts. Although the influence of EDLs on the electrochemical behaviors of electrolytes has been extensively investigated, its influence on the electrode itself, particularly the energy storage mechanism, remains unclear. Herein, using popular α-Fe 2 O 3 , we look into the interaction between electrode and EDL and find the energy storage mechanism of an electrode can be tuned by modulating EDL. The EDL, which is mainly influenced by the inner Helmholtz plane (IHP) through the specific adsorption of ions onto the surface of Fe 2 O 3 , determines which ions are present at the interface and how they react with the electrode. Ultimately, the composition and properties of the EDL determine the energy storage mechanism of an Fe 2 O 3 electrode, including conversion reaction, ions insertion, surface redox reaction and pseudocapacitance. Our results not only provide a new understanding on the nature of the EDL but also demonstrate that the EDL should be promoted as a functional "component" which can be designed for achieving the optimum synergy of an electrode-electrolyte interface. [Display omitted] [ABSTRACT FROM AUTHOR]

Superlubricity is a sliding regime with almost vanishing friction sustained under stringent material conditions. This remarkable phenomenon was first found between surfaces with incommensurate lattice structures, and later extended to materials with weak shear, as in many two-dimensional layered materials. Such materials, however, face great challenges that limit their applications, including the difficulty to scale up to meet the needs of many practical implementations and low durability stemming from the intrinsic structural weakness. Overcoming these limitations hinges on new design and fabrication of advanced superlubricating materials. Here, we report on the realization of macroscale ultradurable superlubricity on passivated transition-metal diborides (TMB 2) following an unconventional design principle that first construct materials with strong anti-wear ability then create superlubricity via effective surface passivation. TMB 2 possess superior mechanical strength and durability, along with the ability to activate in-situ load-induced passivation layers via tribochemical actions at the surface. The resultant passivated TMB 2 exhibits characteristic superlubricating and ultradurable friction coefficient (0.002) and wear rate (10−19 m3/N·m). These findings introduce a fresh approach toward rational design and implementation of superlubricating materials, opening a new avenue for versatile applications at large (up to industrial) scales. [Display omitted] [ABSTRACT FROM AUTHOR]

Abstract The improvement of comprehensive properties including hardness, toughness, wear, and corrosion resistance in the transition-metal carbides/nitrides (TMC(N)) films, especially avoiding the trade-off between the hardness and toughness, is strongly required for various applications. Herein, we provide a new strategy, by activating solid-state dewetting during layered deposition, to accomplish the self-assembly of ordered TaC@Ta core–shell-like nanocomposite film consisting of TaC nanocrystallines encapsulated with thin pseudocrystal Ta tissues (∼1.5 nm). The novel core−shell-like structure can simultaneously achieve superhardness (∼45.1 GPa) mainly dominated by the Orowan strengthening mechanism and high toughness attributed to the indenter-induced phase transformation from the pseudocrystal to body-centered cubic α-Ta, together with drastically enhanced wear and corrosion resistance. Furthermore, thin pseudocrystal Ta encapsulated layer (∼1.5 nm) in the TaC@Ta core–shell-like structure helps for promoting the formation of lubricious TaO x Magnéli phase during sliding, thereby further dropping the coefficient of friction relative to TaC monolayer. Apparently, solid-state dewetting may provide a new route to construct ordered TMC(N)@TM core–shell-like nanocomposite structure capable of combining superhardness, high toughness, low friction, and superior wear and corrosion resistance. Graphical abstract Image 1 [ABSTRACT FROM AUTHOR]

The development of next-generation programmable metasurfaces urgently requires phase change materials with dielectric-metallic transition (DMT-PCMs). Although DMT-PCMs in the infrared have been reported, DMT-PCMs in the visible spectrum are yet to be designed, limiting the nanophotonic applications of conventional programmable metasurfaces to the infrared band. Herein, we find that stoichiometric germanium monotelluride solid solutions, Ge 1- x M x Te (M = Sn, Sb, Pb, and Bi), have excellent DMT performance throughout the whole visible spectrum, and they can be used as versatile material platforms for fabricating programmable metasurfaces. As a proof-of-concept, the DMT performance of stoichiometric Ge 0.9 Sn 0.1 Te solid solution is significantly superior to that of commonly studied non-stoichiometric PCMs (e.g., Ge 2 Sb 2 Te 5 , Sb 2 Te 3). Through a combination of experiments and first-principle calculations, we demonstrate that the high DMT performance of Ge 0.9 Sn 0.1 Te derives from the unique bonding structure of the crystalline state with non-stoichiometric vacancy-free, high atomic number, and weak Sn-Te bonds, which is not present in conventional PCMs. Furthermore, using ultrashort-pulse lasers, we show that the crystalline Ge 0.9 Sn 0.1 Te can be arbitrarily written, erased, and modified at the subwavelength level. The resonance peaks and colors of the Ge 0.9 Sn 0.1 Te-based grating metasurface can be continuously modulated over the whole visible spectrum. These results suggest that the DMT material platforms can be used to fabricate programmable metasurfaces. Therefore, this work presents a coherent report on the physical origin, material design, and photonic devices of DMT in the visible spectrum, which may extend the applications of programmable metasurfaces from the infrared band to the visible spectrum and inspire more researches. [Display omitted] [ABSTRACT FROM AUTHOR]

Ta–Si-C films were deposited by DC magnetron co-sputtering using TaC and Si targets in an Ar-discharge atmosphere. Increasing the current of Si target from 0.0 to 0.5 A led to a continuous increase of Si content from 0.0 to 30.8 at%. The effects of Si content on microstructure were systematically investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). At low Si content (≤ 5.6 at%), Si occupied C vacancies to form a solid solution Ta(C, Si). Further increasing the Si content, some Si atoms bonded with C atoms resulting in the formation of amorphous phase (a-C:Si), and the films presented a nanocomposite structure consisting of solid solution Ta(C, Si) surrounded by a-C:Si matrix. At the highest Si content (30.8 at%), the film exhibited finally X-ray amorphous structures. The hardness ( H ) and fracture toughness ( K f ) were observed to initially increase and then decrease as the Si content was increased. At 5.6 at% Si, the film exhibited a maximum in H (44.9 ± 2.7 GPa) and K f (3.61 ± 0.16 MPa m 1/2 ), which can be ascribed to the formation of a solid solution. On further increasing the Si content, an amorphous phase gradually appeared, leading to a decrease in H and K f . [ABSTRACT FROM AUTHOR]

Nd-doped BaTiO 3 ceramics with Ti vacancy compensation were prepared by a solid-state reaction method, and the lattice structures were identified by XRD and Raman spectra. Samples with light doping possess a tetragonal structure at room temperature, while the cubic phase appeared as the doping content increased. Dielectric properties at low temperature (−100–0 °C) were characterized by the dielectric constant, complex impedance and electric modulus. Colossal dielectric constant and dielectric relaxation processes appeared in all samples. Three electrical responses were observed in the low doping content ceramics, while four appeared in the high doping content ceramics by a combined plot of Z″ and M″. These responses were attributed to the microstructure inhomogeneity, which in turn can be ascribed to charge segregation when the doping content is high. Localization of charge carriers was also observed in all of the ceramics, and the confined carriers preferred to exist in the grain when the doping content was low, while localization would be more significant in grain boundaries with increased dopant. The localization could be ascribed to the formation of defect complexes, which on one hand maintained a high resistivity to the ceramics, and on the other hand, resulted in polarization of the dipoles. Both Maxwell-Wagner polarization and dipole polarization were found to exist in the Nd-doped BaTiO 3 ceramics and were responsible for the colossal dielectric constant and relaxations. The space charge, defect complexes, and microstructure are assumed to be responsible for the change in the dielectric constant and the relaxation mechanism. [ABSTRACT FROM AUTHOR]

A series of TaC/SiC multilayer films with different SiC thicknesses (t SiC ) have been prepared by magnetron sputtering and their microstructure, hardness and toughness investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM) and nanoindentation. Results show that SiC crystallized and grew coherently with TaC layers at low t SiC (≤ 0.8 nm), resulting from the template effect of TaC layers. Maximum hardness and toughness of 46.06 GPa and 4.21 MPa m 1/2 were achieved at t SiC = 0.8 nm with good coherent interface. With further increasing of t SiC , SiC layers partially transformed to an amorphous structure and gradually lost their coherent interface, leading to a rapid drop in hardness and toughness. The crystallization of SiC layers and the coherent growth are required to achieve superhardness and high toughness in the TaC/SiC multilayers. [ABSTRACT FROM AUTHOR]

The high-hardness nature of transition metal nitrides (TMN) has been widely exploited for industrial applications ranging from wear-resistance and cutting tools to scratch-resistant films. To design TMN-based films displaying a further improved toughness and a reduced friction represent urgent challenges. Up to now, creating a nanocomposite structure by introducing a very small content of the metal phase has been considered as a common strategy to enhance hardness and toughness. Herein, we present a new approach to incorporate few solute Ag atoms (∼1.5 at.%) into NbN film to form a Nb-Ag-N solid solution structure, achieving enhanced hardness and toughness, coupled with improved wear-resistance ability and remarkable drop in coefficient of friction (CoF). Hardness and toughness enhancement as well as the tribochemistry actuated by solute Ag have been investigated by combined experimental and density functional theory (DFT) analyses. Results show that the hardness enhancement induced by solute Ag stems from the combination of variation in microstructure and increment in bulk modulus B and C 44 . DFT calculations and electronic structure analyses further reveal that the presence of hybridizations between Ag 5s, 4d orbitals and N p-electrons is responsible for increment in B and C 44 ; furthermore, the appearance of additional Ag e g states contributes to the improved toughness. Additionally, solute Ag can activate self-oxidation by forming Ag 2 O + Nb 2 O 5 at the surface, which is beneficial for the formation of silver niobate (AgNbO 3 ) during the sliding, thereby triggering the falling of the CoF at only 1.5 at.% Ag. Incorporation of few solute Ag atoms into TMN may provide a new strategy to improve the comprehensive properties including hardness, toughness, friction and wear-resistance. [ABSTRACT FROM AUTHOR]

Transition metal nitrides are being widely applied, as durable sensors, semiconductor and superconductor devices, their electrical conductivity and wear resistance having a significant influence on these applications. However, there are few reports about how to improve above properties. In this paper, tantalum was incorporated into hafnium nitride films through Hf 1- x Ta x N y [ x =Ta/(Hf+Ta), y =N/(Hf+Ta)] solid solution. The electrical conductivity and wear resistance of the films were significantly improved, due to the increase of the electron concentration (tantalum has one more valence electron than hafnium) and the increase in H/E and H 3 /E 2 ratios caused by the effect of solid solution hardening, respectively. The highest electrical conductivity of Hf 1- x Ta x N y films is 8.3×10 5 S m −1 , which is 1.7 times and 5.2 times of that of hafnium nitride and tantalum nitride films, respectively. In addition, the lowest wear rate of films is 1.2×10 −6 mm 3 /N m, which is only 10% and 48% of that of hafnium nitride and tantalum nitride films, respectively. These results indicate that alloying with another transition metal is an effective method to improve electrical conductivity and wear resistance of transition metal nitrides. [ABSTRACT FROM AUTHOR]

A stoichiometry-driven phase transition from rocksalt to “nitrogen-rich” structure exists in group-IVB transition metal nitride films. As this phase transition is critical in controlling the film properties it has attracted numerous studies. However, researchers are still divided with regard to the structural identity of this “nitrogen-rich” phase, not to mention detailed exploration of the phase transition mechanisms. In this study, we confirmed that the “nitrogen-rich” phase in hafnium nitride (HfN x ) films had a cubic Th 3 P 4 structure of space group symmetry of I- 43 d (220), namely c -Hf 3 N 4 . The confirmation was obtained by combining the first-principle calculations with a series of experiments: Selected Area Electron Diffraction, High Resolution Transmission Electron Microscopy, Raman, Gracing Incident X-ray Diffraction and X-ray Photoelectron Spectroscopy. The mechanisms of the phase transition were elucidated through calculations on enthalpy of formation ( EOF ). The experimental results agree well with the theoretical calculations. We conclude that with increasing nitrogen, phase transition takes place from rocksalt ( δ -HfN) to c -Hf 3 N 4 through three stages of structural evolution: δ -HfN (containing Hf vacancies) → mixture of ( δ -HfN + c -Hf 3 N 4 ) → c -Hf 3 N 4 . The driving force of the phase transition is energy minimization. The three stages of structural evolution are explained by comparing the EOF of the δ -HfN and c -Hf 3 N 4 phases. As the phase transition takes place, the hafnium nitride film morphs from a conductive and opaque metal into an insulating and transparent semiconductor. [ABSTRACT FROM AUTHOR]

Although point defects are found to exist commonly in non-stoichiometric group-IVB transition metal nitrides, the identification of primary point defects still causes some disagreement. The formation mechanism and influence of primary point defects on electronic structures are not yet well explored. This study finds that the types and formation mechanism of primary point defects in rocksalt hafnium nitride (δ-HfN x ) films can be identified by a combination of first-principles calculations and grazing incidence X-ray diffraction, Raman and high-resolution transmission electron microscopy experiments. It is shown that the primary point defects in sub- and over-stoichiometric δ-HfN x films are N and Hf vacancies, respectively, which arise preferentially because they are thermodynamically more stable than other types of point defects, such as interstitials and antisites, because they have much lower formation energy and equilibrium formation enthalpy. Furthermore, it is found that the formation of N and Hf vacancies have an important role in changing electronic structures. N vacancies act as donor-like defects and can add extra free electrons to the conduction band at a rate of an electron per N vacancy, while Hf vacancies serve as acceptor-like defects and efficiently reduce free electrons at a rate of two electrons per Hf vacancy. Additionally, the formation of N vacancies can induce two new interband absorption bands centered at ∼0.81 and ∼2.27 eV, while the incorporation of Hf vacancies create an additional interband absorption band at ∼3.75 eV. These new insights are demonstrated by good agreement between calculations and experiments. [ABSTRACT FROM AUTHOR]

Full-color multi-level transmittance-modulated films have important applications in many emerging fields, such as decorative smart windows and camouflage laser-protection windows. However, the existing transmission-modulated films cannot obtain rich colors due to the limitation of selective absorption. Although the traditional selective reflection-enhanced Fabry-Perot (FP) cavity has rich colors, it cannot obtain the transmission-modulated properties due to the use of a metal reflective layer. Herein, we design an asymmetric FP cavity with a pair of high- and low-activation energy chalcogenide phase change materials as the reflective layer (named as "PCM pair" FP cavity), achieving a combination of full color and multi-level transmittance modulation in a thin film. This is attributed to the "PCM pair" having the coupling effect of selective reflection enhancement and gradient absorption that traditional FP cavities do not have. According to simulations and experiments of ITO/"PCM pair" ("PCM pair" = GeTe/Sb 2 Te 3), we prove that the gradient absorption is attributed to the multi-stage change of "PCM pair" from amorphous to crystalline state. This increases carrier absorption and induces additional interface absorption, thus resulting in four-level transmittance modulation. The selective reflectivity enhancement is due to light interference effect between "PCM pair" and ITO with different thicknesses, which realizes full-color modulations. Based on new insights into the activation energy, we propose the design principles of "PCM pair" and present a materials map. Therefore, this study provides the new FP cavity and candidate materials for the problem that the color and transmittance modulation cannot be integrated in a thin film. [Display omitted] [ABSTRACT FROM AUTHOR]

At present, pentlandites have attracted the large attention of the researchers as robust and efficient electrocatalysts for electrochemical water splitting. These materials can play an essential role in the construction and development of new and high-performance electrocatalytic materials. This is due to their micro-structure of hydrogenase-like active sites and adjustable molecular compositions, as well as their enhanced electrocatalytic activity and stability. Therefore, this review summarizes recent developments in the experimental synthesis of pentlandites for electrochemical water splitting. Three essential pentlandite-based electrocatalysts (pentlandite intrinsic materials, ion-exchange pentlandite materials, and pentlandite-based composite materials) were investigated in depth. Finally, the issues and challenges faced at present are summarized, and the development scenarios of pentlandite-based electrocatalysts are discussed. • The methods of experimental synthesis of pentlandite materials are reviewed. • The latest development of pentlandite materials in electrochemical water decomposition are reviewed. • The main strategies of electrochemical water decomposition of pentlandite materials are summarized. • The problems of pentlandite materials in the direction of electrochemical water decomposition were summarized. [ABSTRACT FROM AUTHOR]