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[Display omitted] • A new adsorbent called Se-CS-PA efficiently remove PAT from juice solutions. • The R2 of the pseudo-first-order rate was greater than that of the second-order. • The R2 for the Langmuir and Freundlich isotherms were 0.96 and 0.99, respectively. A novel and effective adsorbent known as Seleno-chitosan-phytic acid nanocomplex (Se-CS-PA) has been developed specifically for efficiently removing patulin (PAT) from a simulated juice solution. The synthesis of Se-CS-PA nanocomplex was confirmed through Fourier transform infrared (FT-IR), scanning electron microscopy (SEM), and energy dispersive X-Ray (EDX) analyses. Response surface methodology (RSM) was employed using central composite design (CCD) to examine the impact of four independent variables (PA concentration, amount of nano-complex, duration of interaction between PAT and nano-complex, and initial concentration of PAT) on the removal of PAT. PA concentration of 0.1 % with 2.1 g Se-CS-PA nanocomplex according to RSM polynomial equation and apple juice with 25 μg.L-1 PAT yielded a remarkable adsorption rate of 94.23 % and 87.52 % respectively after 7 h. The process of PAT adsorption was explained using the pseudo-first-order model (R2 = 0.8858) for the kinetic model and the Freundlich isotherm (R2 = 0.9988) for the isotherm model. [ABSTRACT FROM AUTHOR]

In this paper, an accurate aging model for Read Static Noise Margin (RSNM) of conventional 6 transistors (6T) FinFET SRAM cell is presented. The model, which is developed based on accurate I - V formulation suitable for FinFET, considers soft oxide breakdown (SBD) as well as bias temperature instability (BTI) effects. The accuracy of the model is verified by comparing its results with those of HSPICE simulations for the 14 nm and 10 nm technologies. The results show the maximum errors of 0.63% and 0.54% for the 14 nm and 10 nm technologies, respectively, when averaged over a wide range of stress times and supply voltages. The model also may be used to accurately predict the cumulative distribution function of the RSNM in the presence of the process variation with a very small error compared to the one obtained from the Monte Carlo approach with a considerably short runtime. [ABSTRACT FROM AUTHOR]

Renal function in patients with atherosclerosis and renal artery stenosis (ARAS) deteriorates more frequently than in nonatherosclerotic RAS. We hypothesized that ARAS aggravates stenotic-kidney micro vascular loss compared to RAS. Domestic pigs were randomized to normal, RAS, and ARAS (RAS fed a high-cholesterol diet) groups (n = 7 each). Ten weeks later stenotic-kidney oxygenation, renal blood flow, and glomerular filtration rate (GFR) were evaluated in vivo, and micro vascular density by micro-computed tomography. Blood pressure in both RAS and ARAS was elevated; and stenotic-kidney renal blood flow and GFR similarly decreased. RAS decreased the density of small-size cortical microvessels (<200 μm), whereas ARAS extended the decrease to medium-sized microvessels (200–300 μm). Cortical hypoxia and interstitial fibrosis increased in both RAS and ARAS but correlated inversely with micro vascular density only in RAS. Atherosclerosis aggravates loss of stenotic-kidney microvessels, yet additional determinants likely contribute to cortical hypoxia and fibrosis in swine ARAS. [ABSTRACT FROM AUTHOR]

In this paper, we propose a robust SRAM design which is based on FinFETs. The design is performed by dynamically adjusting the back-gate voltages of pull-up transistors. For the write operation, we use an extra write driver which sets the desired back-gate voltages during this operation. This approach considerably increases the write margin. During the hold state, the back-gates are precharged to the supply voltage using an extra precharge circuit. This decreases the static power. Finally, we use nMOS switches to provide the optimum back-gate voltages during the read state. To minimize the area and power overheads, an instance of the circuitry is used for each column. The performance of the proposed technique is assessed using mixed mode device/circuit simulations for a physical gate length of 22 nm. The results show that the minimum operating voltage for six-sigma read and write yield is about 0.15 V lower than that of the recently proposed structures. In addition, the suggested SRAM shows significantly higher write margin and lower static power compared to the recently proposed structures. The minimum operating voltage of our proposed structure can be lowered down to 0.5 V through some work function tuning to balance the read and write stability. This minimum voltage is 0.1 V lower than the minimum operating voltage of the other structures with similar work function tunings. [ABSTRACT FROM AUTHOR]

Abstract: In this paper, we propose an accurate model for the read static noise margin (SNM). The model includes the effects of soft oxide breakdown (SBD), negative and positive bias temperature instabilities (NBTI and PBTI, respectively). To assess the accuracy of the proposed model, its predictions are compared with those of HSPICE simulations for 32, and 22nm technologies. The comparison verifies the high accuracy of the model. The results show a maximum error of 4.5% for a wide range of supply voltages. Using this model, the effect of bias temperature instabilities on the aggravation of the read SNM by SBD is also studied. The study shows that both NBTI and PBTI phenomena worsen the effect of SBD on the read SNM by 34%. [Copyright &y& Elsevier]

Abstract: In this paper, we propose a read SNM model which considers soft oxide breakdown (SBD). It makes use of a resistance for modeling the soft oxide breakdown which adds two terms to the original model expression for the read SNM. The accuracy of the model is verified by comparing its predictions with those of HSPICE simulations for 45, 32, and 22nm technologies. The comparison reveals a very good accuracy for the model. The results also show that NBTI aggravates the effect of SBD on the read SNM. This suggests that the effect of NBTI and SBD should be studied concurrently as has been performed in our model. [Copyright &y& Elsevier]

Abstract: In this paper, we present an accurate method for predicting the read failure probability of SRAM cells. First, using a simple I–V model for transistors, analytical expressions for the V read and V trip of SRAM cells are obtained. These expressions are subsequently used to derive a fairly accurate model for the read margin of SRAM cells. Then, using Jacobian determinant, the joint probability density function for the V read and V trip is calculated without assuming any specific distribution function for its probability. The accuracy of the approach is studied by comparing its results with those of previous techniques and standard Monte Carlo simulations for 32 and 45nm CMOS technologies. Compared to these techniques, our approach has a considerably lower error at the price of slightly increasing the computation time or is much faster at the cost of marginally decreasing the accuracy. In addition, the method has the advantage of not being restricted to a specific probability distribution form. [Copyright &y& Elsevier]

Abstract: In this paper, a near-triangular buried-oxide partial silicon-on-insulator (TB-PSOI) lateral double-diffused MOS field-effect transistor is proposed. The electric field and electrostatic potential in this structure are modified by the gradual buried-oxide thickness increase. The modification includes the addition of a new peak in the electric field in comparison to that of the conventional PSOI. To assess the efficiency of the proposed structure, its breakdown voltage is compared with that of conventional PSOI using two-dimensional simulations. A comparative study is performed in terms of silicon-film and buried-oxide layer thicknesses, drift region and buried-oxide layer lengths, and drift region doping concentrations. The study shows that under the same drain current, the breakdown voltage of TB-PSOI is nearly two times higher than its PSOI counterpart (108% improvement). Simulation results show that the three-stepped oxide layer closely follows the TB-PSOI structure with a breakdown voltage improvement of 96% compared to that of the PSOI structure. [Copyright &y& Elsevier]

Approximate computing is one of the promising techniques in error-resilient applications to overcome high-density integration challenges, such as energy consumption and performance. Multipliers constitute a significant portion of computer arithmetic units, leading to considerable energy and time consumption. In this paper, we propose low-power and compact approximate compressors for composing approximate Dadda multiplier structures, including compressors, half adders, and full adders, which utilize three-phase partial product compression: truncated, approximation, and exact columns. In approximate columns, we consider approximate compressors derived from the truth table of the exact 4:2 compressor and simplified K-map entries based on the probability of each combination of inputs. An error-correcting module (ECM) is designed to distinguish specific cases and reduce the error metrics. All circuits were simulated using ModelSim and then synthesized using Design Compiler with the 15 nm FinFET technology. When compared to state-of-the-art works, our multipliers exhibit approximately 30%, 43%, and 10% reductions in power, area, and delay, respectively. To evaluate their functionality, we conducted image multiplication and implemented a simple multi-layer perceptron (MLP) neural network using the modified National Institute of Standards and Technology (MNIST) dataset in MATLAB with 0.998 mean structural similarity index metric (MSSIM), 51 dB peak-signal noise ratio (PSNR), and 95% classification accuracy. • Introducing novel ultra-compact approximate compressor structures to reduce design metrics. • Proposing an error-correcting module (ECM) for compensating errors of approximation. • Proposing truncated 8 × 8 Dadda multipliers using the proposed approximate compressors and ECM. • Evaluating the accuracy of approximate multipliers in error-tolerant applications. [ABSTRACT FROM AUTHOR]

Angiotensin-converting enzyme inhibitors/angiotensin II receptor blockers (ARBs) may induce an acute decrease of glomerular filtration rate (GFR) in the stenotic kidney in renal artery stenosis, but most patients tolerate these drugs well. We hypothesized that angiotensin-converting enzyme inhibitors/ARBs stabilize stenotic kidney function during prolonged treatment by conferring protective effects. We tested this in control domestic pigs and pigs with renal artery stenosis untreated or treated with Valsartan, or triple therapy (seven pigs in each group) for 4 weeks starting 6 weeks after stenosis induction. Renal function, oxygenation, tubular function, and microcirculation were assessed by multi-detector computed tomography (CT), blood oxygen level-dependent magnetic-resonance imaging, and micro-CT. Valsartan and triple therapy decreased blood pressure similarly; however, Valsartan did not change the GFR of the stenotic kidney compared with renal artery stenosis and was similar to triple therapy. Both Valsartan and triple therapy stimulated microvascular density and improved tubular function. Valsartan also caused a greater increase of angiogenic factors and a decrease in oxidative stress, which were related to higher cortical perfusion and tubular response than triple therapy. Thus, Valsartan did not decrease stenotic kidney GFR, but improved cortical perfusion and microcirculation. These beneficial effects may partly offset the hemodynamic GFR reduction in renal artery stenosis and preserve kidney function. [ABSTRACT FROM AUTHOR]