15 results on '"Haendler, S."'
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2. Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs.
3. Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5μm down to 20nm.
4. Characterization and modeling of low frequency noise in CMOS inverters
5. Shrinking from 0.25 down to 0.12 μm SOI CMOS technology node: a contribution to low-frequency noise in partially depleted N-MOSFETs
6. Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOI N-MOSFETs
7. <atl>Reliability of ultra-thin film deep submicron SIMOX nMOSFETs
8. Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature.
9. Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs
10. Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs.
11. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction.
12. Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications.
13. Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology.
14. Unexpected impact of germanium content in SiGe bulk PMOSFETs.
15. Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below
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