1. Vacancy-impurity pairs in n-type Si1-xGex studied by positron spectroscopy
- Author
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Rummukainen, M., Slotte, J., Saarinen, K., Radamson, H.H., Hållstedt, J., and Kuznetsov, A.Yu.
- Subjects
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POSITRON annihilation , *SPECTRUM analysis , *GERMANIUM , *IMPURITY distribution in semiconductors - Abstract
Abstract: Positron annihilation spectroscopy was applied to study relaxed P-doped n-type layers with Ge concentrations up to 30%. As-grown SiGe layers were defect-free and annihilations are superpositions from bulk Si and Ge. Proton irradiation at 2MeV energy with a fluence was used to produce saturated positron trapping in monovacancy related defects. The defects were identified as V–P pairs, the E-center. The distribution of Si and Ge atoms surrounding the E-center is the same as in the host lattice. The vacancy migration process leading to the formation of V–P pairs therefore does not seem to have a preference for either Si or Ge atoms. [Copyright &y& Elsevier]
- Published
- 2006
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