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Your search keyword '"Syu, Yong-En"' showing total 7 results
Start Over Author "Syu, Yong-En" Publisher elsevier b.v.
7 results on '"Syu, Yong-En"'

2. Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]

Author

Chang, Kuan-Chang, Chen, Jung-Hui, Tsai, Tsung-Ming, Chang, Ting-Chang, Huang, Syuan-Yong, Zhang, Rui, Chen, Kai-Huang, Syu, Yong-En, Chang, Geng-Wei, Chu, Tian-Jian, Liu, Guan-Ru, Su, Yu-Ting, Chen, Min-Chen, Pan, Jhih-Hong, Liao, Kuo-Hsiao, Tai, Ya-Hsiang, Young, Tai-Fa, Sze, Simon M., Ai, Chi-Fong, Wang, Min-Chuan, and Huang, Jen-Wei

Published
2021
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6. Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment.

Author

Chang, Kuan-Chang, Chen, Jung-Hui, Tsai, Tsung-Ming, Chang, Ting-Chang, Huang, Syuan-Yong, Zhang, Rui, Chen, Kai-Huang, Syu, Yong-En, Chang, Geng-Wei, Chu, Tian-Jian, Liu, Guan-Ru, Su, Yu-Ting, Chen, Min-Chen, Pan, Jhih-Hong, Liao, Kuo-Hsiao, Tai, Ya-Hsiang, Young, Tai-Fa, Sze, Simon M., Ai, Chi-Fong, and Wang, Min-Chuan

Subjects
*RANDOM access memory, *SUPERCRITICAL carbon dioxide, *SUPERCRITICAL fluids, *CHEMICAL bonds, *HYDRATION, *SILICON oxide films, *SCHOTTKY effect
Abstract

Highlights: [•] The supercritical fluid treatment can efficiently reduce the operation current of resistance random access memory. [•] The dangling bonds of Sn:SiO x thin film were cross linking by the hydration–dehydration reaction by supercritical fluid treatment. [•] The current conduction mechanism of low resistance state in post-treated RRAM device was dominated by hopping conduction. [•] The current conduction mechanism of high resistance state in post-treated RRAM device was dominated by Schottky emission. [ABSTRACT FROM AUTHOR]

Published
2014
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7. N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors.

Author

Chang, Geng-Wei, Chang, Ting-Chang, Jhu, Jhe-Ciou, Tsai, Tsung-Ming, Syu, Yong-En, Chang, Kuan-Chang, Jian, Fu-Yen, Hung, Ya-Chi, and Tai, Ya-Hsiang

Subjects
*NITROUS oxide, *TEMPERATURE measurements, *STRAY currents, *AMORPHOUS alloys, *ZINC oxide thin films, *THIN film transistors, *EFFECT of temperature on metals, *ELECTRIC properties of metals
Abstract

Abstract: N2O plasma treatment suppressed the temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors (a-IGZO TFTs). For untreated devices, the transfer curve exhibited abnormal electrical properties at high temperature. The abnormal electrical properties are explained by the energy band diagrams for both forward and reverse sweep. Above 400K, holes can be generated from trap-assisted transition, and drift to the source side which induces source barrier lowering. The source side barrier lowering enhances electron injection from the source to channel and causes an apparent sub-threshold leakage current. This phenomenon, which is experimentally verified, only appears in the device without N2O plasma treatment, but not in the device with N2O plasma treatment. The results suggested that the density of states for a-IGZO with N2O plasma treatment is much lower than that without plasma treatment. [Copyright &y& Elsevier]

Published
2013
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