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Abstract: Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, the recent mobility enhancement technologies including application of strain and new channel materials such as SiGe, Ge and III–V materials are reviewed. These carrier transport enhancement technologies can be classified into three categories; global enhancement techniques, local enhancement techniques and global/local-merged techniques. We present our recent results on MOSFETs using these three types of the technologies with an emphasis on the global strained-Si/SiGe/Ge substrates and the combination with the local techniques. Finally, issues on device structures merged with III–V materials are briefly described. [Copyright &y& Elsevier]

Abstract: Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on high hole mobility p-MOSFETs using global/local SiGe or Ge channels. There are two directions for introducing SiGe or Ge channels into Si CMOS platform. One is to use SiGe or Ge global substrates and the other is to form SiGe or Ge-channel regions locally on Si wafers. In both cases, the Ge condensation technique, where Ge-channel layers are formed by oxidizing SiGe films on SOI substrates, are effectively utilized. As for the global technologies, ultrathin GOI substrates are prepared and used to fabricate high mobility GOI p-MOSFETs. As for the local technologies, SGOI or GOI channels are formed locally in the active area of p-MOSFETs on SOI wafers. It is shown that the hole mobility enhancement factor of as high as 10 is obtained in locally fabricated p-MOSFETs through the effects of high-Ge content and the compressive strain. Furthermore, the local Ge-channel technologies are combined with global SiGe or Ge substrates for pursuing the optimal and individual design of n-MOSFETs and p-MOSFETs on a single Si wafer. The CMOS device composed of strained-Si n-MOSFETs and SGOI p-MOSFETs is successfully integrated on a same wafer, which is a promising CMOS structure under deep sub 100nm technology nodes. [Copyright &y& Elsevier]

Abstract: New composite materials were prepared using cesium hydrogen sulfate (CsHSO4) or cesium dihydrogen phosphate (CsH2PO4) and phosphosilicate gel (P2O5–SiO2 gel). In X-ray diffraction patterns of these composites, diffraction peaks due to Cs2H5(SO4)2(PO4) and CsH5(PO4)2 were observed for CsHSO4–(P2O5–SiO2 gel) composites and CsH2PO4–(P2O5–SiO2 gel) composites, respectively. These composites showed high conductivities in the order of 10−3 Scm−1 at 150°C due to melting of Cs2H5(SO4)2(PO4) or CsH5(PO4)2 in the composites. In the cooling process, the CsHSO4–(P2O5–SiO2 gel) composites kept relatively high conductivity to 110°C where solidification of Cs2H5(SO4)2(PO4) occurs, whereas CsH2PO4–(P2O5–SiO2 gel) composites showed relatively high conductivity continuously to ambient temperature. [Copyright &y& Elsevier]

Using input-output tables and a modified Herendeen approach, Tezuka and Kaya examine energy use in the production of Japanese goods. Tables and areas of discussion include methodology, energy conservation and energy intensities of various industries.

Abstract: The road transports especially the motor vehicles play a significant role in increment of energy consumption in the transportation sector. However, the harmful greenhouse gas (GHG) emissions from such vehicles which are the main causes of global warming, have been increased as well. One of the effective solutions to reduce the growth rate of energy consumption is the implementation of fuel economy standard and label. Other countries' experiences indicate that the program is very beneficial for society, environment and government. The hierarchy of the program consists of the test procedure, fuel economy standards, fuel economy label and incentive program as a peak of the program. Reviews of the fuel economy standard can be found in many references. However, a few papers deal with the incentive program specifically. Therefore, this paper aims to give a review on the implementation of the incentive program globally in support of fuel economy standard and label for the motor vehicles. Finally, as the incentive program is necessary to support fuel economy standard and label, it should be applied to the motor vehicles as soon as possible. [Copyright &y& Elsevier]

Abstract: Automobiles are considered as the main energy consumer in the transportation sector. According to the National Energy Balance, its accounted for about 36% of the total energy consumption in Malaysia. In order to reduce energy consumption in this sector, this country must consider setting fuel economy standards for motor vehicles sometime in near future. The first step toward developing fuel economy standards is to create a precise test and rating procedure for the automobiles. The test procedure is the technical foundation for all related programs namely; fuel economy standards, fuel economy labels and incentive programs. The test conditions should represent the driving situations and environment of the country. This paper is attempts to present a critical review on fuel economy testing procedure around the world and to propose a process for selecting a fuel economy test procedure for automobiles based on the conditions and requirements of the country. The internationally recognize test procedure adopted by several countries is also presented in this paper. Even though the paper only discusses the test procedure for automobiles, the methods can be directly applied for other types of vehicles and in other countries without major modifications. [Copyright &y& Elsevier]

Abstract: The road transport and particularly the passenger cars are responsible for increasing the share of transport energy consumption and harmful emissions level growth. The fuel economy label is an informative tool to influence customers and manufacturers to put special care to the energy efficiency issue. The implementation of fuel economy label for motor vehicles in Malaysia will prevent the up going trend of petroleum consumption which will be beneficial to consumer and society. As a consequence, the harmful greenhouse gas (GHG) emissions that are the main causes of the global warming and air pollution will be reduced. Studies in developed countries show that implementing the fuel economy label is beneficial for society, government and the environment. This paper focused on a review of international experiences on fuel economy label. It also attempts to discuss about the energy savings possibilities that lead to reduce GHG emissions by implementing the program. The last but not least recommendation is the fact that the sooner the fuel economy label applies for the passenger cars in Malaysia will be more beneficial for the country. [Copyright &y& Elsevier]

Abstract: This paper reviews our recent studies of novel CMOS channels based on the concept of sub-band structure engineering. This device design concept can be realized as strained-Si channel MOSFETs, ultra-thin SOI MOSFETs and Ge-on-Insulator (GOI) MOSFETs. An important factor for the electron mobility enhancement is the introduction of larger sub-band energy splitting between the 2- and 4-fold valleys on a (100) surface, which can be obtained in strained-Si and ultra-thin body channels. The electrical properties of strained-Si MOSFETs are summarized with an emphasis on strained-SOI structures. Also, the importance of the precise control of ultra-thin SOI thickness is pointed out from the experimental results of the SOI thickness dependence of mobility. Furthermore, it is shown that the increase in the sub-band energy splitting can also be effective in obtaining higher current drive of n-channel MOSFETs under ballistic transport regime. This suggests that the current drive enhancement based on MOS channel engineering utilizing strain and ultra-thin body structures can be extended to ultra-short channel MOSFETs dominated by ballistic transport. [Copyright &y& Elsevier]

Abstract: We have studied (110)-surface strained-SOI n- and p-MOSFETs on (110)-surface relaxed Si0.75Ge0.25-on-insulator structures, applying the Ge condensation technique to SiGe layers grown on (110)-surface SOI wafers. We have demonstrated that the electron and the hole mobility enhancement of (110)-surface strained-SOI devices amounts to 23% and 50%, respectively, against the mobilities of (110)-surface unstrained MOSFETs. As a result, the electron and the hole mobility ratios of (110)-surface strained-SOI MOSFETs to the universal mobility of (100)-surface bulk-MOSFETs increase up to 81% and 203%, respectively. Therefore, the current drivability unbalance between n- and p-MOS can be reduced. Moreover, both the electron and the hole mobilities of the (110)-surface strained-SOIs strongly depend on the drain current flow direction, which is explained by anisotropic effective mass characteristics of the carriers. We have also introduced a simple model for electric field dependence of hole mobility of (110)-surface strained- and unstrained-MOSFETs. (110)-surface strained-SOI technology is also the candidate for higher speed scaled CMOS, optimizing the current flow directions of n- and p-MOS. [Copyright &y& Elsevier]

A variable number of tandem repeats (VNTR) in the second intron of the serotonin transporter gene (STin2) has been studied in association with the susceptibility to affective disorders. Recently, it was reported that selective serotonin reuptake inhibitors were more effective in patients with major depressive disorder having the homozygous allele pair (12-copy/12-copy) of VNTR in the STin2 than in ones having other allele combinations. As the study had methodological problems, further studies are needed to confirm the above finding. Therefore, the authors investigated whether the allelic variation of VNTR in the STin2 was associated with the antidepressant response to fluvoxamine in 66 patients with major depressive disorder. Fluvoxamine was prescribed up to 200 mg/day in the dosing protocol for 6 weeks. The present study showed no significant association between the polymorphism of VNTR in the STin2 and the treatment response to fluvoxamine. [Copyright &y& Elsevier]