Search

Sample preparation for atom probe tomography of 3D semiconductor devices has proven to significantly affect field evaporation and the reliability of reconstructed data. A cross-sectional preparation method is applied to state-of-the-art Si finFET technology on SOI. This preparation approach advantageously provides a conductive path for voltage and heat, offers analysis of many fins within a single tip, and improves resolution across interfaces of particular interest. Measured B and Ge profiles exhibit good correlation with SIMS and EDX and show no signs of B clustering or pile-up near the Si/SiGe interface of the fin. [ABSTRACT FROM AUTHOR]

Abstract: An industrial V-P-O catalyst (DuPont), comprising vanadyl pyrophosphate crystallites encapsulated by a silica shell, has been investigated. Reaction evaluation for butane oxidation was conducted over (i) the catalyst precursor, (ii) the calcined precursor and (iii) equilibrated material (2 years on-line) in a fixed-bed reactor. Characterization was conducted on these three samples by XRD, SEM, TEM and XPS. The core–shell particles have also been examined with a novel X-ray ultramicroscopy (XuM) technique which reveals the internal structure without having to section the material. The microstructural and surface compositional changes that have occurred over the course of its industrial lifespan in a fluidized bed reactor are correlated with the catalytic activity measurements. [Copyright &y& Elsevier]