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Cross-sectional atom probe tomography sample preparation for improved analysis of fins on SOI.
- Source :
-
Ultramicroscopy . Feb2016, Vol. 161, p105-109. 5p. - Publication Year :
- 2016
-
Abstract
- Sample preparation for atom probe tomography of 3D semiconductor devices has proven to significantly affect field evaporation and the reliability of reconstructed data. A cross-sectional preparation method is applied to state-of-the-art Si finFET technology on SOI. This preparation approach advantageously provides a conductive path for voltage and heat, offers analysis of many fins within a single tip, and improves resolution across interfaces of particular interest. Measured B and Ge profiles exhibit good correlation with SIMS and EDX and show no signs of B clustering or pile-up near the Si/SiGe interface of the fin. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03043991
- Volume :
- 161
- Database :
- Academic Search Index
- Journal :
- Ultramicroscopy
- Publication Type :
- Academic Journal
- Accession number :
- 111974803
- Full Text :
- https://doi.org/10.1016/j.ultramic.2015.11.013