1. Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour
- Author
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Yogesh Singh Chauhan, Amit Agarwal, Prateek Jain, and Chandan Yadav
- Subjects
010302 applied physics ,Mobile channel ,Ambipolar diffusion ,business.industry ,Chemistry ,Charge current ,Electrical engineering ,Inverse ,Inversion (meteorology) ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Tunnel field-effect transistor ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Computational physics ,0103 physical sciences ,Decay length ,Materials Chemistry ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Quantum tunnelling - Abstract
We present a surface potential based analytical model for double gate tunnel field effect transistor (DGTFET) for the current, terminal charges, and terminal capacitances. The model accounts for the effect of the mobile charge in the channel and captures the device physics in depletion as well as in the strong inversion regime. The narrowing of the tunnel barrier in the presence of mobile charges in the channel is incorporated via modeling of the inverse decay length, which is constant under channel depletion condition and bias dependent under inversion condition. To capture the ambipolar current behavior in the model, tunneling at the drain junction is also included. The proposed model is validated against TCAD simulation data and it shows close match with the simulation data.
- Published
- 2017