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1. Diffusion barrier material for Cu metallization using ALD-WN[subx]C[suby].

Author

Wei-Men Li, Tuominen, Marko, Haukka, Suvi, Sprey, Hessel, and Raajimakers, Ivo J.

Subjects
*THIN films, *DIFFUSION, *SEMICONDUCTOR industry, *TERNARY superconductors
Abstract

Examines the function of PVD-Titanium based thin films as commonly used materials in diffusion barrier in semiconductor industry. Presentation of the atomic layer deposition; Capabilities of the low resistivity ternary material.

Published
2003

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