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The article focuses on the properties and technological application of two-dimensional (2D) crystals such as graphene and transition metal dichalcogenides. Topics include the capacity of graphene to serve as alternative to silicon (Si)-based transistors, its application on nano-based stacks materials composed of 2D materials such as insulators, metals and semiconductors, and the challenges related to 2D materials manufacturing processes such as gate engineering, patterning, and doping.

Assesses the compatibility of dielectric layers with conventional polysilicon gate electrodes. Use of standard processing equipment; Power capacity; Level of performance.

The article discusses the means of improving the workfunction control of metal gate electrodes. The author cites that the key challenge for applying metal gates for metal-oxide-semiconductor field-effect transistor is the choosing of a metal with suitable workfunction. The author also defines a novel route to workfunction control through the alteration of the interface polarization layer by cautious deposition of dielectric stack and metal gate, then, by a temperature treatment.