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Your search keyword '"J.-G. Provost"' showing total 5 results
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5 results on '"J.-G. Provost"'

1. Amplitude Modulation and Frequency Chirp of an Injection-Locked Quantum Dash Semiconductor Laser

Author

Benjamin Lingnau, D. Erasmen, Jacky Even, Frédéric Grillot, Philip J. Poole, J.-G. Provost, Kathy Lüdge, Cheng Wang, Mohamed E. Chaibi, HAL, TelecomParis, Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Département Communications & Electronique (COMELEC), Télécom ParisTech, and Technische Universität Berlin (TU)

Subjects
Pulse-frequency modulation, Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, business.industry, 02 engineering and technology, Optical modulation amplitude, Laser, 01 natural sciences, law.invention, 010309 optics, Amplitude modulation, 020210 optoelectronics & photonics, Optics, Quantum dot laser, Pulse-amplitude modulation, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Chirp, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business, Phase modulation
Abstract

International audience; Injection-locked quantum dash laser exhibits a different FM-to-AM ratio as compared to the solitary one.Optical injection enhances the FM-AM phase difference. The linewidth enhancement factor can no longer becharacterized by the FM/AM technique.

Published
2014

2. Frequency Chirp Stabilization in Semiconductor Distributed Feedback Lasers With External Control

Author

Didier Erasme, Frédéric Grillot, B. Thedrez, J.-G. Provost, K. Kechaou, HAL, TelecomParis, Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Département Communications & Electronique (COMELEC), and Télécom ParisTech

Subjects
Physics, Optical fiber, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, business.industry, Chirp spread spectrum, Physics::Optics, 02 engineering and technology, Laser, 01 natural sciences, law.invention, Semiconductor laser theory, 010309 optics, Laser linewidth, 020210 optoelectronics & photonics, Optics, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Chirp, Optoelectronics, Physics::Atomic Physics, business, Coupling coefficient of resonators, Quantum well
Abstract

International audience; It is well known that current modulation in diode lasers generates amplitude (AM) and optical frequency (FM) modulations. The frequency chirp under direct current modulation originates from variations in the carrier density and from the finite difference in carrier density between the laser on and off states. Modulation of the carrier density modulates the gain and the optical index causing the resonant mode to shift. This frequency chirp broadens the spectrum, which is a serious limitation for high-speed applications and optical fiber communications. At low frequencies, thermal effects also alter the frequency chirp. The aim of this paper is to show that the laser’s frequency chirp can be modified using an external control technique. The chirp response is evaluated via the determination of the chirp-to-power ratio (CPR) through a Mach-Zehnder interferometer. Experiments demonstrate that when an external optical feedback is properly adjusted, the CPR can be severely decreased over a wide range of modulation frequencies as compared to the free-running case. These preliminary results obtained on quantum well distributed feedback lasers (QW DFB) with low normalized coupling coefficient (􏰀L) demonstrate how to stabilize the CPR through the DFB facet phase effects or parameters such as the linewidth enhancement factor. In order to confirm this frequency chirp engineering, self- consistent calculations based on the transfer matrix method are also presented.

Published
2012

3. Temperature dependence of dynamic properties and tolerance to optical feedback of high-speed 1.3-µm DFB quantum-dot lasers

Author

K. Merghem, M. Fischer, D.-Y. Cong, Beatrice Dagens, S. Azouigui, F. Gerschutz, Q. Zou, I. Krestnikov, A. Martinez, A. Kovsh, J.-G. Provost, Johannes Koeth, A. Ramdane, Département Electronique et Physique (EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanoplus Nanosystems and Technologies GmbH, Nanoplus, and Innolume (Innolume GmbH)

Subjects
Semiconductor laser, 02 engineering and technology, 7. Clean energy, Gallium arsenide, law.invention, chemistry.chemical_compound, 020210 optoelectronics & photonics, Optics, law, 0202 electrical engineering, electronic engineering, information engineering, Quantum dot (QD), Optical feedback, Electrical and Electronic Engineering, Physics, business.industry, Relaxation frequency, 020208 electrical & electronic engineering, Biasing, Atmospheric temperature range, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, Transmission (telecommunications), Quantum dot laser, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Coherence collapse, business, Constant (mathematics)
Abstract

International audience; The temperature dependence of the dynamic performance of p-doped InAs/GaAs quantum-dot distributed feedback (DFB) lasers emitting at 1.3 µm is investigated. A maximum relaxation frequency of ~7 GHz is demonstrated for a constant bias current over the whole 25°C-85°C temperature range. The Henry factor is temperature independent and remains constant at ~2.5. The effect of external optical feedback is assessed on the same device in a 10-Gb/s transmission over 20 km

Published
2011

4. Optical feedback tolerance of quantum dot and quantum dash based semiconductor lasers operating at 1.55µm

Author

Slimane Loualiche, Frédéric Grillot, Francois Lelarge, Olivier Dehaese, O. Le Gouezigou, Dalila Make, Kamel Merghem, Anthony Martinez, Beatrice Dagens, Abderrahim Ramdane, Alain Accard, Rozenn Piron, J.-G. Provost, Qin Zou, S. Azouigui, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, THALES [France]-ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Differential gain, Physics::Optics, 02 engineering and technology, 01 natural sciences, law.invention, Semiconductor laser theory, 010309 optics, 020210 optoelectronics & photonics, Optics, Operating temperature, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, semiconductor laser, business.industry, quantum dot, Laser, Atomic and Molecular Physics, and Optics, quantum dash, Quantum dot laser, Quantum dot, Optical cavity, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Coherence collapse, business, optical feedback, Coherence (physics)
Abstract

International audience; This paper reports on the tolerance of low-dimensional InAs/InP quantum-dash- and quantum-dot-based semiconductor lasers to optical feedback in the 1.55 mum window. For this purpose, the onset of coherence collapse (CC) is experimentally determined and systematically investigated as a function of different laser parameters, such as the injection current, differential gain, temperature, and photon lifetime. It is in particular found that for both material systems the onset of CC increases with the injection current in a similar way to bulk or quantum-well-based devices. Of most importance, we experimentally show that the differential gain plays a key role in the optical feedback tolerance. It is indeed shown to determine not only the range of the onset of CC but also the dependence of this threshold both on the temperature and laser cavity length. Increasing the operating temperature from 25degC to 85degC leads to a decrease of the onset of CC by a factor of only ~3 dB, well accounted for by the variation of the differential gain in this temperature range. We find no difference in the tolerance to external reflections of a truly 3-D confined quantum-dot-based laser and a quantum dash device of the same cavity length, which have similar differential gains. A tentative analysis of our data is finally carried out, based on existing models.

Published
2009

5. Stable Above-Threshold Linewidth Enhancement Factor in a 1.52μm InAs/InP (311B) Quantum Dot Laser

Author

Frédéric Grillot, Slimane Loualiche, A. Martinez, Kamel Merghem, Luke F. Lester, F. Alexandre, J.-G. Provost, Rozenn Piron, Olivier Dehaese, A. Ramdane, GRILLOT, Frédéric, Center for High Technology Materials (CHTM), The University of New Mexico [Albuquerque], Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Alcatel Lucent Bell Labs, ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, business.industry, Low gain, 020208 electrical & electronic engineering, 02 engineering and technology, Laser, 3. Good health, law.invention, Gallium arsenide, chemistry.chemical_compound, Laser linewidth, 020210 optoelectronics & photonics, chemistry, Quantum dot laser, law, 0202 electrical engineering, electronic engineering, information engineering, Indium phosphide, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business
Abstract

The alphaH-factor behavior with current is investigated in a 1.52 mum InAs/InP (311B) QD laser. It is shown that due to low gain compression effects, no divergence of the alphaH-factor occurs unlike 1.3 mum InAs/GaAs QD lasers.

Published
2008

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