1. Long, Short, Monolithic - The Gate Loop Challenge for GaN Drivers: Invited Paper
- Author
-
Maik Kaufmann, Bernhard Wicht, and Achim Seidel
- Subjects
010302 applied physics ,business.industry ,Computer science ,020208 electrical & electronic engineering ,Transistor ,Electrical engineering ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,Voltage regulator ,01 natural sciences ,law.invention ,Inductance ,law ,Logic gate ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,0202 electrical engineering, electronic engineering, information engineering ,Overshoot (signal) ,Node (circuits) ,Power semiconductor device ,business ,Hardware_LOGICDESIGN ,Voltage - Abstract
With fast switching GaN any parasitic gate loop inductance degrades the switching performance and may lead to false turn-on as well as gate voltage overshoot. Two approaches to overcome these challenges in driving GaN transistors are discussed in this paper. In a discrete silicon based driver, the gate loop inductance is actively utilized for a resonant gate drive approach. In a second implementation, the gate loop inductance is reduced close to zero by GaN-on-Si monolithic integration of the power transistor and the driver on one die. It includes an integrated supply voltage regulator circuit that generates the gate drive voltage out of the high-voltage switching node. The results show fast and robust switching behavior with minimal ringing.
- Published
- 2020