32 results on '"Anderson, Travis J."'
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2. Characterization and Modeling of a 1.3 kV Vertical GaN Diode
3. A Simple Edge Termination Design for Vertical GaN P-N Diodes.
4. 12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes.
5. Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications
6. High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates.
7. A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes.
8. Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation.
9. Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors
10. Quantifying substrate removal induced electrothermal degradation in AlGaN/GaN HEMTs
11. Vertical GaN junction barrier schottky diodes by Mg implantation and activation annealing
12. Comparison of single event transients in AlGaN/GaN Schottky-gate and MIS-gate HEMTs using single-photon absorption and focused X-ray techniques
13. GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging.
14. UV Single-Photon Absorption Single-Event Transient Testing of Pristine and Irradiated AlGaN/GaN HEMTs
15. Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN
16. Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation
17. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation.
18. Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices.
19. Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates.
20. Degradation of dynamic ON-resistance of AlGaN/GaN HEMTs under proton irradiation
21. Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique.
22. Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs.
23. Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs.
24. Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates.
25. Thermionic-Field Emission Barrier Between Nanocrystalline Diamond and Epitaxial 4H-SiC.
26. Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs.
27. Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors.
28. Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation.
29. Nanocrystalline Diamond-Gated AlGaN/GaN HEMT.
30. Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation.
31. Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films.
32. An A1N/Ultrathin A1GaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching.
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