28 results on '"Chang, W. H."'
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2. Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size
3. First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering
4. First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)
5. Performance and Reliability Improvement in Ge nMOSFETs with Different Surface Orientations through Channel Flattening Process
6. Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection
7. Significant Performance Enhancement of UTB GeOI pMOSFETs by Advanced Channel Formation Technologies
8. Position Control and Gas Source CVD Growth Technologies of 2D MX2 Materials for Real LSI Applications
9. First experimental observation of channel thickness scaling (down to 3 nm) induced mobility enhancement in UTB GeOI nMOSFETs
10. Demonstration of InGaAs FETs on quartz glass toward terahertz applications
11. Exploration of fluorescence properties of gold nanoclusters at the single-molecule levels
12. InGaAs and Ge MOSFETs with a common high κ gate dielectric
13. Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS
14. Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
15. Achieving nearly free fermi-level movement and Vth engineering in Ga2O3(Gd2O3)/In0.2Ga0.8As
16. Nano-electronics of high κ dielectrics on InGaAs for key technologies beyond Si CMOS
17. Inversion-channel GaN MOSFET using atomic-layer-deposited Al2O3 as gate dielectric
18. Inversion n-channel GaN MOSFETs with atomic-layer-deposited A12O3 as gate dielectrics
19. Epitaxial growth of high quality InAs/InGaAlAs quantum dash-in-well structure on InP
20. Point-of-Care Support for Error-Free Medication Process
21. A low-power and low-noise CMOS prescaler for 900 MHz to 1.9 GHz wireless applications.
22. Growth and characterization of high-speed InP/InGaAs bipolar transistors using n/sup +/-InP contacting layers.
23. InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging.
24. Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells.
25. A high-performance 0.25- mu m CMOS technology. I. Design and characterization.
26. Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells
27. Single-photon emissions from individual InGaAs quantum dots in photonic crystal microcavity.
28. Performance analysis of the FDDI MAC protocol.
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