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Your search keyword '"Fonteneau, Pascal"' showing total 13 results
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13 results on '"Fonteneau, Pascal"'

1. $4.6\mu \mathrm{m}$ Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

Author

Tubert, Cedric, primary, Mellot, Pascal, additional, Desprez, Yann, additional, Mas, Celine, additional, Authie, Arnaud, additional, Simony, Laurent, additional, Bochet, Gregory, additional, Drouard, Stephane, additional, Teyssier, Jeremie, additional, Miclo, Damien, additional, Bezal, Jean-Raphael, additional, Augey, Thibault, additional, Hingant, Franck, additional, Bouchet, Thomas, additional, Roig, Blandine, additional, Mazard, Aurelien, additional, Vergara, Raoul, additional, Mugny, Gabriel, additional, Tournier, Arnaud, additional, Lalanne, Frederic, additional, Roy, Francois, additional, Goncalves, Boris Rodrigues, additional, Vignetti, Matteo, additional, Fonteneau, Pascal, additional, Farys, Vincent, additional, Agut, Francois, additional, Santos, Joao Miguel Melo, additional, Hadden, David, additional, Channon, Kevin, additional, Townsend, Christopher, additional, Rae, Bruce, additional, and Pellegrini, Sara, additional

Published
2021
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2. 4.6µm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

Author

Tubert, Cedric, primary, Mellot, Pascal, additional, Desprez, Yann, additional, Mas, Celine, additional, Authie, Arnaud, additional, Simony, Laurent, additional, Bochet, Gregory, additional, Drouard, Stephane, additional, Teyssier, Jeremie, additional, Miclo, Damien, additional, Bezal, Jean-Raphael, additional, Augey, Thibault, additional, Hingant, Franck, additional, Bouchet, Thomas, additional, Roig, Blandine, additional, Mazard, Aurelien, additional, Vergara, Raoul, additional, Mugny, Gabriel, additional, Tournier, Arnaud, additional, Lalanne, Frederic, additional, Roy, Francois, additional, Goncalves, Boris Rodrigues, additional, Vignetti, Matteo, additional, Fonteneau, Pascal, additional, Farys, Vincent, additional, Agut, Francois, additional, Santos, Joao Miguel Melo, additional, Hadden, David, additional, Channon, Kevin, additional, Townsend, Christopher, additional, Rae, Bruce, additional, and Pellegrini, Sara, additional

Published
2021
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3. Z²-FET as capacitor-less eDRAM cell for high-density integration

Author

Navarro, Carlos, Duan, Meng, Parihar, Mukta Sing, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Lee, Kyunghwa, Sampedro, Carlos, Cheng, Binjie, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Kim, Seong-Il, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Riel, Heike, Wells, Paul, Kim, Yong-Tae, Asenov, Asen, and Gamiz, Francisco

Subjects
Hardware_INTEGRATEDCIRCUITS
Abstract

2-D numerical simulations are used to demonstrate the Z²-FET as a competitive embedded capacitor-less dynamic random access memory cell for low-power applications. Experimental results in 28-nm fully depleted-silicon on insulator technology are used to validate the simulations prior to downscaling tests. Default scaling, without any structure optimization, and enhanced scaling scenarios are considered before comparing the bit cell area consumption and integration density with other eDRAM cells in the literature.

Published
2017

4. Extended analysis of the Z²-FET: operation as capacitorless eDRAM

Author

Navarro, Carlos, Lacord, Joris, Parihar, Mukta Singh, Adamu-Lema, Fikru, Duan, Meng, Rodriguez, Noel, Cheng, Binjie, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Kim, Yong-Tae, Asenov, Asen, Cristoloveanu, Sorin, and Gamiz, Francisco

Subjects
Hardware_MEMORYSTRUCTURES, Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY
Abstract

The Z²-FET operation as capacitorless DRAM\ud is analyzed using advanced 2-D TCAD simulations for IoT\ud applications. The simulated architecture is built based on\ud actual 28-nm fully depleted silicon-on-insulatordevices. It is\ud found that the triggering mechanism is dominated by the\ud front-gate bias and the carrier’s diffusion length. As in other\ud FB-DRAMs, the memory window is defined by the ON voltage\ud shift with the stored body charge. However, the Z²-FET’s\ud memory state is not exclusively defined by the inner charge\ud but also by the reading conditions.

Published
2017

5. Sharp Logic Switch Based on Band Modulation.

Author

Lee, Kyung Hwa, El Dirani, Hassan, Fonteneau, Pascal, Bawedin, Maryline, and Cristoloveanu, Sorin

Subjects
IMPACT ionization, FIELD-effect transistors, LOGIC, GLOBAL Positioning System
Abstract

The capability of Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) to operate as a sharp logic switch is demonstrated in advanced FD-SOI (Fully Depleted SOI) technology. The operation mechanism is band-modulation which enables remarkable DC performance in terms of ON/OFF current ratio and sharp switch (~1 mV/decade). Z2-FETs have successfully been used for ESD protection and capacitorless DRAM memory, but the presence of an inherent hysteresis has handicapped so far logic applications. However, this letter shows that fast pulses on the gate result in hysteresis-free switching: the device turns ON and OFF at same gate bias. The sharpness of the switch depends on device parameters, bias and speed of operation. Systematic experiments compare the performance of Z2-FETs with dual or single ground-planes. [ABSTRACT FROM AUTHOR]

Published
2019
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6. Low-Power Z2-FET Capacitorless 1T-DRAM

Author

Parihar, Mukta Singh, primary, Lee, Kyung Hwa, additional, El Dirani, Hassan, additional, Navarro, Carlos, additional, Lacord, Joris, additional, Martinie, Sebastien, additional, Barbe, Jean-Charles, additional, Fonteneau, Pascal, additional, Galy, Philippe, additional, Le Royer, Cyrille, additional, Mescot, Xavier, additional, Gamiz, Francisco, additional, Cheng, Binjie, additional, Asenov, Asen, additional, Taur, Yuan, additional, Bawedin, Mayline, additional, and Cristoloveanu, Sorin, additional

Published
2017
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7. Z^\textsf 2 -FET as Capacitor-Less eDRAM Cell For High-Density Integration.

Author

Navarro, Carlos, Meng Duan, Singh Parihar, Mukta, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Kyunghwa Lee, Sampedro, Carlos, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Seong-Il Kim, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, and Riel, Heike

Subjects
CAPACITORS, CIRCUIT elements, FIELD-effect transistors, COMPUTER simulation, ELECTROMECHANICAL analogies
Abstract

2-D numerical simulations are used to demonstrate the Z2-FET as a competitive embedded capacitor-less dynamic random access memory cell for low-power applications. Experimental results in 28-nm fully depleted-silicon on insulator technology are used to validate the simulations prior to downscaling tests. Default scaling, without any structure optimization, and enhanced scaling scenarios are considered before comparing the bit cell area consumption and integration density with other eDRAM cells in the literature. [ABSTRACT FROM AUTHOR]

Published
2017
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9. Innovative ESD protections for UTBB FD-SOI technology

Author

Solaro, Yohann, primary, Fonteneau, Pascal, additional, Legrand, Charles-Alexandre, additional, Marin-Cudraz, David, additional, Passieux, Jeremy, additional, Guyader, Pascal, additional, Clement, Laurent-Renaud, additional, Fenouillet-Beranger, Claire, additional, Ferrari, Philippe, additional, and Cristoloveanu, Sorin, additional

Published
2013
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