50 results on '"Hardtdegen, H."'
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2. Enhancement of THz Radiation Intensity in Fe/Heavy-Metal Spintronic Emitters Epitaxially Grown on GaAs(001)
3. Generation of THz transients in FeCo/graphene nanobilayers by femtosecond laser pulses
4. Towards III-nitride nano-LED based single photon emitters: Technology and applications
5. Highly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrate
6. Electrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip lines
7. Fabrication of UV sources for novel lithographical techniques: Development of nano-LED etching procedures
8. InGaN mesoscopic structures for low energy consumption nano-opto-electronics
9. Hybrid optoelectronics based on a nanocrystal/III-N nano-LED platform
10. Ballistic and spin transport in InAs nanowires
11. Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures
12. InGaN nano-LEDs for energy saving optoelectronics
13. Novel double-level-T-gate technology
14. III-nitride nano-LEDs for single photon lithography
15. Towards future III-nitride based THz OEICs in the UV range
16. Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
17. GaAs nanowhiskers for femtosecond photodetectors and THz emitters
18. Quantum phenomena during electron transport in InAs nanowires
19. Toward Spin Electronic Devices Based on Semiconductor Nanowires.
20. An Alternative Path for the Fabrication of Self-Assembled III-Nitride Nanowires.
21. Quantum phenomena during electron transport in InAs nanowires.
22. Smooth GaN recess wet photoelectrochemical etching.
23. Electrical characterisation of strained modulation doped In/sub x/Ga/sub 1-x/As/InP heterostructures with extremely high mobilities.
24. A novel InP/InGaAs photodetector based on a 2DEG layer structure.
25. Quantum transport in quasi one-dimensional In/sub 0.77/Ga/sub 0.23/As/InP rings.
26. A novel InGaAs Schottky-2DEG diode.
27. Optimization of strained Ga/sub 1-x/In/sub x/As/InP heterostructures towards high channel conductivity for HEMT application.
28. 0.2μm T-gate InP/InGaAs/ InP pHEMT with an InGaP diffusion barrier layer grown by LP-MOCVD using an N2-carrier.
29. Novel InP/GaInAs MSM Photodetector for Integration in HEMT Circuits.
30. Selective grown vertical GaAs FET's with an insulator/metal/insulator gate structure.
31. The Permeable Junction Base Transistor with a new Gate of extremely high doped p++ - GaAs.
32. Unintentional impurity incorporation at the interface between InP substrate and buffer layer grown by LP-MOVPE.
33. Improvement of the surface quality of InP wafers using TOF-SIMS as characterisation.
34. High bandwidth InP/InGaAs based MSM-2DEG diodes for optoelectronic application.
35. Improvement of the surface quality of polished InP wafers.
36. Demonstration of nitrogen carrier gas in MOVPE for InP/InGaAs-based high frequency and optoelectronic integrated devices.
37. A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT.
38. 0.2 /spl mu/m T-gate InP/InGaAs/InP pHEMT with an InGaP diffusion barrier layer grown by LP-MOCVD using an N/sub 2/-carrier.
39. Growth of GaAs using a N/sub 2/ Carrier
40. Improvement of the surface quality of polished InP wafers
41. A novel InP/InGaAs photodetector based on a 2DEG layer structure
42. Demonstration of nitrogen carrier gas in MOVPE for InP/InGaAs-based high frequency and optoelectronic integrated devices
43. Improvement of the surface quality of InP wafers using TOF-SIMS as characterisation
44. Smooth GaN recess wet photoelectrochemical etching
45. Unintentional impurity incorporation at the interface between InP substrate and buffer layer grown by LP-MOVPE
46. Characterization of Interface Structure in GalnAs/lnP Superlattices by means of X-Ray Diffraction
47. High bandwidth InP/InGaAs based MSM-2DEG diodes for optoelectronic application
48. A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT
49. Characterization of Interface Structure in GalnAs/lnP Superlattices by means of X-Ray Diffraction.
50. Growth of GaAs using a N/sub 2/ Carrier.
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