36 results on '"Hosoda T"'
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2. 1200V GaN Switches on Sapphire Substrate
3. 650V/780A GaN Power HEMT Enabling 10kW-Class High-efficiency Power Conversion
4. GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges
5. 650 Volt GaN: Highest Quality-Highest Performance Drives Market Ramp
6. 1.9–3.3 μm Type-I quantum-well cascade diode lasers
7. Diode lasers operating in spectral range from 1.9 to 3.5 μm
8. Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 – 3.5 μm
9. Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power
10. New Degradation Phenomena of Stress-Induced Voiding Inside via in Copper Interconnects
11. Stress migration phenomena in narrow copper lines
12. Simulation analysis of a tethered space robot for space experiment on sounding rocket by JAXA/ISAS.
13. Stress-induced voiding under vias connected to "narrow" copper lines.
14. Thermal stress and reliability characterization of barriers for Cu interconnects
15. Record highest sensitivity of -28.0 dBm at 10 Gb/s achieved by newly developed extremely-compact superlattice-APD module with TIA-IC.
16. High power 1.48 /spl mu/m DC-PBH LDs fabricated by all selective MOVPE (ASM) technology.
17. Effects of line size on thermal stress in aluminum conductors.
18. Effects of copper and titanium addition to aluminum interconnects on electro- and stress-migration open circuit failures.
19. Copper dual damascene interconnects with very low-k dielectrics targeting for 130 nm node.
20. 2.7-µm GaSb-Based Diode Lasers With Quinary Waveguide.
21. Wavelength-independent operation of EA-modulator integrated wavelengthselectable microarray light sources.
22. 1.48-μm-wavelength ASM-DC-PBH LDs with extremely uniform lasing characteristics.
23. Effects of Copper and Titanium Addition to Aluminum Interconnects on Electro- and Stress-Migration Open Circuit Failures
24. Optimum method of working assignment in some welding robots with genetic algorithm
25. Stress induced failure analysis by stress measurements in copper dual damascene interconnects
26. Effects of copper and titanium addition to aluminum interconnects on electro- and stress-migration open circuit failures
27. Copper dual damascene interconnects with very low-k dielectrics targeting for 130 nm node
28. High power 1.48 μm DC-PBH LDs fabricated by all selective MOVPE (ASM) technology
29. Sensing and control of weld pool by fuzzy-neural network in robotic welding system
30. 3.2 µm single spatial mode diode lasers operating at room temperature.
31. GaSb-based laser diodes operating within spectral range of 2 – 3.5 µm.
32. Stress induced failure analysis by stress measurements in copper dual damascene interconnects.
33. Sensing and control of weld pool by fuzzy-neural network in robotic welding system.
34. Optimum method of working assignment in some welding robots with genetic algorithm.
35. Over half-Watt output power 1.48 μm wavelength EDFA pumping ASM LD's.
36. Cu interconnect technologies in Fujitsu and problems in installing Cu equipment in an existing semiconductor manufacturing line.
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