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In the paper, high-power InGaAs/InAlAs Schottky photodiode with low amplitude-to-phase noise conversion is presented. It is shown that photodiode cutoff frequency is 28 GHz and maximal output microwave power is 58 mW at the frequency of 20 GHz. Amplitude-to-phase noise conversion coefficient of the proposed photodiode is demonstrated to be less than 1.5 rad/W at the frequency of 20 GHz

Composition and electrical characteristics of HfO 2 /Si/GaAs(001) interface formed by e-beam evaporation of Hf in NO 2 ambient on MBE-grown Si/GaAs structure, were studied by XPS and C-V methods. The deposition of HfO 2 on Si-passivated GaAs(001) surface leads to the formation of sharp HfO 2 /Si/GaAs interface without oxidation of Si interlayer. AFM studies of the HfO 2 /Si/GaAs(001) interface show that HfO 2 deposition preserved the flatness of the surface, keeping the mean roughness on the terraces on a level of approximately 0.2–0.3 nm.

Parameters of Schottky barrier diodes (SBD), such as the ideality factor (n), series resistance (R s ) and the effective barrier height (ϕ Bn ), were obtained from I-V and C-V measurements of Al/Si/GaAs and Al/GaAs heterostructures at room temperature. For SBD with a Si interlayer grown by molecule beam epitaxy the following parameters were found: n = 1.29, ϕI-V = 0.74eV and R s = 120Ω as compared to the sample without interlayer (1.7–7.5, 0.8eV and 500Ω, respectively). The electronic properties of Si/GaAs(001) interface were determined from C-V and G-V measurements of Al/SiO 2 /GaAs (001) MIS structure. It is shown that formation of Si/GaAs(001) interface allows reducing the density of surface states to ∼(1–5)·1011 cm−2 eV−1 for Au/SiO 2 /GaAs (001) MIS structure.