50 results on '"Mahapatra, Santanu"'
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2. Insights on Anisotropic Dissipative Quantum Transport in n-Type Phosphorene MOSFET
3. Parametric Optimization of Self-Switching Diode
4. New Asymmetric Atomistic Model for the Analysis of Phase-Engineered MoS2-Gold Top Contact
5. Compact Model for Low Effective Mass Channel Common Double-Gate MOSFET.
6. Germanane MOSFET for Subdeca Nanometer High-Performance Technology Nodes.
7. indDG: A new compact model for common double gate MOSFET adapted to gate oxide thickness asymmetry
8. Modeling of sheet-concentration and temperature-dependent resistivity of a suspended monolayer graphene
9. Asymmetric Junctions in Metallic–Semiconducting–Metallic Heterophase MoS2.
10. Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET.
11. Small Signal Nonquasi-static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry
12. A Non Quasi-static Small Signal Model for Long Channel Symmetric DG MOSFET
13. Concept of "Crossover Point" and its Application on Threshold Voltage Definition for Undoped-Body Transistors
14. Analysis of the Energy Quantization Effects on Single Electron Inverter Performance through Noise Margin Modeling
15. A New Threshold Voltage Model for Omega Gate Cylindrical Nanowire Transistor
16. Performance enhancement of the tunnel field effect transistor using a SiGe source
17. Necessity for quantum mechanical simulation for the future technology nodes
18. Modeling and Analysis of Noise Margin in SET Logic
19. Theoretical Insights to Niobium-Doped Monolayer MoS2–Gold Contact.
20. Effect of Line Defects on the Electrical Transport Properties of Monolayer MoS \bf 2 Sheet.
21. A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region.
22. A Short-Channel Common Double-Gate MOSFET Model Adapted to Gate Oxide Thickness Asymmetry.
23. Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs.
24. Solution of Time Dependent Joule Heat Equation for a Graphene Sheet Under Thomson Effect.
25. Performance Analysis of Strained Monolayer MoS2 MOSFET.
26. Modeling of Temperature and Field-Dependent Electron Mobility in a Single-Layer Graphene Sheet.
27. Nonquasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry.
28. Thermoelectric Performance of a Single-Layer Graphene Sheet for Energy Harvesting.
29. Direct Band-to-Band Tunneling in Reverse Biased \MoS2 Nanoribbon p-n Junctions.
30. Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating Effect.
31. Bipolar Poisson Solution for Independent Double-Gate MOSFET.
32. Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET.
33. Physics-Based Band Gap Model for Relaxed and Strained [100] Silicon Nanowires.
34. A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry.
35. Improvements in Efficiency of Surface Potential Computation for Independent DG MOSFET.
36. Analytical Solution of Joule-Heating Equation for Metallic Single-Walled Carbon Nanotube Interconnects.
37. An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET.
38. Analytical Study of Low-Field Diffusive Transport in Highly Asymmetric Bilayer Graphene Nanoribbon.
39. Large-Signal Model for Independent DG MOSFET.
40. A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors.
41. Analysis of Energy Quantization Effects on Single-Electron Transistor Circuits.
42. Impact of Energy Quantization on the Performance of Current-Biased SET Circuits.
43. Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor.
44. Modeling and Analysis of Body Potential of Cylindrical Gate-All-Around Nanowire Transistor.
45. Assessment of SET Logic Robustness Through Noise Margin Modeling.
46. Analytical Modeling of Single Electron Transistor for Hybrid CMOS-SET Analog IC Design.
47. Proposal for Graphene–Boron Nitride Heterobilayer-Based Tunnel FET.
48. Physics-Based Thermal Conductivity Model for Metallic Single-Walled Carbon Nanotube Interconnects.
49. Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor
50. Errata to “Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET”.
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