8 results on '"Takebe M"'
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2. Depletion/enhancement mode InAlAs/InGaAs-MOSHEMTs with nm-thin gate insulating layers formed by oxidation of the InAlAs layer.
3. Improved transconductance n-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation.
4. Improved transconductance N-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation
5. Depletion/enhancement mode InAlAs/InGaAs- MOSHEMTs with nm - thin gate insulating layers formed by oxidation of the InAlAs layer
6. N-channel, p-channel, depletion, enhancement GaAs metal-insulator semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces
7. Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET
8. Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET.
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