79 results on '"Zheng, Zheyang"'
Search Results
2. HyFET—A GaN/SiC Hybrid Field-Effect Transistor
3. Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit
4. Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation
5. Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs
6. A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs
7. SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs
8. E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability
9. Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack.
10. Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation.
11. Gate Reliability of Schottky-Type p -GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias.
12. GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits.
13. Monolithic Integration of Gate Driver and Protection Modules With P -GaN Gate Power HEMTs.
14. Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.
15. A Bootstrap Voltage Clamping Circuit for Dynamic VTH Characterization in Schottky-Type p-GaN Gate Power HEMT
16. Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs
17. Surface Reinforcement Technology for Suppressing Hot-Carrier-Induced Degradations in p-GaN Gate Power HEMTs
18. Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs
19. GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping.
20. E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability
21. Planar GaN Power Integration – The World is Flat
22. Gate Reliability and VTH Stability Investigations of p-GaN HEMTs
23. All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications
24. 700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode
25. Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests
26. Enhancement-Mode GaN p-Channel MOSFETs for Power Integration
27. A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage
28. Dv/Dt-control of 1200-V Co-packaged SiC- JFET/GaN-HEMT Cascode Device
29. Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs
30. ON-Resistance Analysis of GaN Reverse-Conducting HEMT With Distributive Built-In SBD.
31. Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET
32. Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices.
33. Threshold Voltage Instability of Enhancement-Mode GaN Buried p -Channel MOSFETs.
34. Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests.
35. RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure.
36. Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs.
37. Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs.
38. Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT.
39. Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching.
40. GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation.
41. Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device.
42. Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications
43. Investigations of p-Shielded SiC Trench IGBT with Considerations on IE Effect, Oxide Protection and Dynamic Degradation
44. Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs
45. Repetitive Short Circuit Energy Dependent $V_{\text{TH}}$ Instability of 1.2kV SiC Power MOSFETs
46. Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode
47. Identifying the Location of Hole-Induced Gate Degradation in $\text{LPCVD} -\text{SiN}_{x}/\text{GaN}$ MIS-FETs under High Reverse-Bias Stress
48. Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline $\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}}$ Channel
49. Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters.
50. p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.