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Start Over Author "Bosworth, Bryan T." Publisher institute of electrical and electronics engineers, inc.
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1. Three-dimensional closed-form model for potential barrier in undoped FinFETs resulting in analytical equations for [V.sub.T] and subthreshold slope

Author

Kloes, Alexander, Weidemann, Michaela, Goebel, Daniel, and Bosworth, Bryan T.

Subjects
Metal oxide semiconductor field effect transistors -- Electric properties, Metal oxide semiconductor field effect transistors -- Research, Numerical analysis -- Usage, Harmonic functions -- Usage, Business, Electronics, Electronics and electrical industries
Abstract

An analytical approach is described for calculating the three-dimensional (3-D) electrostatic potential in undoped triple-gate SOI MOS devices. The results have helped in deriving models for subthreshold slope and threshold voltage of nanoscale triple-gate FETs.

Published
2008

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