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Your search keyword '"Xiaoxian Liu"' showing total 7 results
Start Over Author "Xiaoxian Liu" Publisher institute of electronics, information and communications engineers (ieice)
7 results on '"Xiaoxian Liu"'

1. Temperature-dependent characterizations on parasitic capacitance of tapered through silicon via (T-TSV)

Author

Xiaoxian Liu, Huaxi Gu, Lixin Guo, Zhangming Zhu, and Yang Liu

Subjects
010302 applied physics, Materials science, Through-silicon via, business.industry, 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Parasitic capacitance, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Electrical and Electronic Engineering, business
Published
2018
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4. The impact of trapping centers on AlGaN/GaN resonant tunneling diode

Author

Xiaoxian Liu, Jun Luo, Lin-An Yang, Yue Hao, Zhangming Zhu, and Haoran Chen

Subjects
Materials science, business.industry, Resonant-tunneling diode, Optoelectronics, Algan gan, Trapping, Electrical and Electronic Engineering, Condensed Matter Physics, business, Quantum well, Electronic, Optical and Magnetic Materials
Published
2013
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5. Analytical models for the thermal strain and stress induced by annular through-silicon-via (TSV)

Author

Xiaoxian Liu, Zhangming Zhu, Fengjuan Wang, Yintang Yang, and Ruixue Ding

Subjects
Materials science, Silicon, Through-silicon via, business.industry, chemistry.chemical_element, Structural engineering, Dielectric, Condensed Matter Physics, Finite element method, Electronic, Optical and Magnetic Materials, PMOS logic, Stress (mechanics), chemistry, Perpendicular, Electrical and Electronic Engineering, Composite material, business, NMOS logic
Abstract

Accurate analytical models for the strain and stress in silicon induced by annular Through-silicon-via (TSV) are proposed. Finite element method (FEM) is used for the model verification. It is shown that errors for the strain and stress models are respectively less than 6.6% and 6.8% for various metal and dielectric materials. Based on the analytical model of stress, keep-out-zones (KOZs) are also evaluated for pMOS and nMOS, as the stress is parallel and perpendicular to transistor channel. Annular TSVs with various materials induce KOZs of less than 6.6μm. W exhibits the best thermo-mechanical performance with KOZ=0.

Published
2013
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