1. Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation
- Author
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Chung-Yu Lu, Edward Yi Chang, Chia-Ao Chang, C. T. Lee, and Jui-Chien Huang
- Subjects
Materials science ,business.industry ,Aluminium nitride ,Schottky barrier ,Transistor ,Electrical engineering ,Wide-bandgap semiconductor ,Gallium nitride ,High-electron-mobility transistor ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Tungsten nitride ,Power density - Abstract
An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WN x ) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WN x HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/mm at 2 GHz. A combination of these findings indicates the robust performance of this WN x material and its potential as a Schottky gate for AlGaN/GaN HEMTs.
- Published
- 2009