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Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation
- Source :
- Electronics Letters. 45:1348
- Publication Year :
- 2009
- Publisher :
- Institution of Engineering and Technology (IET), 2009.
-
Abstract
- An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WN x ) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WN x HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/mm at 2 GHz. A combination of these findings indicates the robust performance of this WN x material and its potential as a Schottky gate for AlGaN/GaN HEMTs.
- Subjects :
- Materials science
business.industry
Aluminium nitride
Schottky barrier
Transistor
Electrical engineering
Wide-bandgap semiconductor
Gallium nitride
High-electron-mobility transistor
law.invention
chemistry.chemical_compound
chemistry
law
Optoelectronics
Electrical and Electronic Engineering
business
Tungsten nitride
Power density
Subjects
Details
- ISSN :
- 00135194
- Volume :
- 45
- Database :
- OpenAIRE
- Journal :
- Electronics Letters
- Accession number :
- edsair.doi...........414192b888423f63a79eb8fa2dcba72b