36 results on '"Chai Chang-Chun"'
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2. C band microwave damage characteristics of pseudomorphic high electron mobility transistor*
3. Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves
4. Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter
5. Physical Properties of C-Si Alloys inC2/mStructure
6. Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter
7. Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter
8. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor
9. Electronic Transport Properties of (7,0) Semiconducting Carbon Nanotube
10. Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
11. Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave
12. Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
13. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor
14. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor
15. Temperature dependence of latch-up effects in CMOS inverter induced by high power microwave
16. Hardening measures for bipolar transistors against microwave-induced damage
17. The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters
18. Motion of current filaments in avalanching PIN diodes
19. Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor
20. Microwave damage susceptibility trend of a bipolar transistor as a function of frequency
21. Effects of microwave pulse-width damage on a bipolar transistor
22. Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor
23. New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer
24. Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors
25. Quantitatively Exploring the Effect of a Triangular Electrode on Performance Enhancement in a 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector
26. Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor
27. Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor
28. Effects of microwave pulse-width damage on a bipolar transistor
29. Optical coupling optimization in a novel metal—semiconductor—metal ultraviolet photodetector based on semicircular Schottky electrodes
30. Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor
31. Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors
32. Statistical Elmore delay of RC interconnect tree
33. Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal—semiconductor—metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes
34. Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models
35. Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse
36. EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy
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