1. Steep switching characteristics of single-gated feedback field-effect transistors
- Author
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Yoonjoong Kim, Sangsig Kim, Doohyeok Lim, Minsuk Kim, Sola Woo, and Kyoungah Cho
- Subjects
Materials science ,Silicon ,chemistry.chemical_element ,Bioengineering ,Nanotechnology ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,01 natural sciences ,law.invention ,law ,0103 physical sciences ,Band diagram ,Hardware_INTEGRATEDCIRCUITS ,General Materials Science ,Electrical and Electronic Engineering ,Positive feedback ,010302 applied physics ,business.industry ,Subthreshold conduction ,Mechanical Engineering ,Transistor ,General Chemistry ,021001 nanoscience & nanotechnology ,Hysteresis ,chemistry ,Mechanics of Materials ,Optoelectronics ,Field-effect transistor ,Charge carrier ,0210 nano-technology ,business - Abstract
In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I–V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec−1, an on/off current ratio of approximately 1011, and an on-current of approximately 10−4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.
- Published
- 2016