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Multilevel cell (MLC) capability of a memory device is an attractive alternative to realise high integration density of memory arrays. In addition, power efficient memory cell along with MLC capability has huge potential in neuromorphic computing and data storage applications. In this study low power, high speed and 3-bit multilevel bipolar resistance switching operation is reported in TiO2 thin films where copper is used as counter electrode. On account of using an oxidisable electrode, low programming voltages (∼+0.2 V, −0.1 V) along with low reset current (∼10 µA) are observed, thereby ensuing low power (∼µW) memory operation. Additionally, observation of fast switching (∼250 ns) translated to ultra-low energy (∼pJ) consumption. By varying compliance current (IC) from 25 µA to 1.6 mA during the set process, eight distinct non-volatile resistance states are reliably obtained, which showed statistically significant and non-overlapping resistance distribution. The multilevel resistive switching in Cu/TiO2/Pt device is explained by considering filamentary the widening phenomenon in the electrochemical metallization memory cell. Numerical calculations revealed that increase in the diameter of the metallic conducting filament from ∼3 nm to 70 nm with increasing IC is accountable for multiple low resistance states. The results of this study are promising towards realisation of emerging memory devices with low operating power, fast switching operation and high spatial density. [ABSTRACT FROM AUTHOR]

We report photovoltaic (PV) effect in multiferroic Bi0.9Sm0.1Fe0.95Co0.05O3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO3 (BFO) thin films have been deposited on Pt/TiO2/SiO2/Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (Voc) and the short-circuit current density (Jsc) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm−2. Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. [ABSTRACT FROM AUTHOR]

In this work, metal-TiO2–SiO2–Si (MTOS) capacitors have been fabricated where the TiO2 layers have been deposited by the pulsed laser deposition technique followed by annealing at different temperatures. MTOS devices with an effective dielectric thickness (EDT) as low as 1.6 nm and very low leakage current have been realized by using a two-step deposition process in which a buffer layer of TiO2 has first been deposited at 300 °C. This was followed by deposition and annealing of TiO2 at 750 °C. It has also been shown that the annealing temperature plays a significant role in determining the EDT of the dielectric film as well as the electrical characteristics of the MTOS capacitors. [ABSTRACT FROM AUTHOR]