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Your search keyword '"Myronov, M."' showing total 19 results
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19 results on '"Myronov, M."'

2. Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure

Author

Knox, CS, Morrison, C, Herling, F, Ritchie, DA, Newell, O, Myronov, M, Linfield, EH, and Marrows, CH

Subjects
Condensed Matter::Materials Science, Condensed Matter::Other, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Abstract

InAs/GaSb coupled quantum well heterostructures are important semiconductor systems with applications ranging from spintronics to photonics. Most recently, InAs/GaSb heterostructures have been identified as candidate two-dimensional topological insulators, predicted to exhibit helical edge conduction via fully spin-polarised carriers. We study an InAs/GaSb double quantum well heterostructure with an AlSb barrier to decouple partially the 2D electrons and holes, and find conduction consistent with a 2D hole gas, with an effective mass of 0.235 ± 0.005 m 0, existing simultaneously with hybridised carriers with an effective mass of 0.070 ± 0.005 m 0, where m 0 is the bare electron mass.

Published
2017

18. Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8 Reverse-Graded Buffers.

Author

Dobbie, A., Van Huy Nguyen, Morris, R. J. H., Xue-Chao Liu, Myronov, M., and Leadley, D. R.

Subjects
THERMAL stability, GERMANIUM, BUFFER action (Chemistry), CHEMICAL vapor deposition, SURFACE roughness, COMPLEMENTARY metal oxide semiconductors
Abstract

The thermal stability of thin (110 nm) compressively strained Ge surface channels, grown by reduced-pressure chemical vapor deposition on high quality relaxed Si0.2Ge0.8 reverse-graded buffers, has been investigated using in-situ hydrogen annealing at temperatures up to 650°C. Strain relaxation was observed and found to increase for thicker channels and higher anneal temperatures. For a Ge channel thickness ⩽45 nm, an increased surface roughening was found to dominate the strain relaxation process, which culminated in islanding. For the thicker (⩾45 nm) Ge channels misfit dislocation generation appeared to be the most dominant mechanism. Our results show that low thermal budgets (T < 550°C) should be employed for the fabrication of ~0.65% lattice mismatch strained Ge channels currently being developed for applications in CMOS-based devices and strained Ge-on-insulator platforms. [ABSTRACT FROM AUTHOR]

Published
2012
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