26 results on '"Tadjer, Marko J."'
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2. Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres
3. Demonstration of CuI as a P–N heterojunction toβ-Ga2O3
4. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates.
5. Lateral GaN JFET Devices on Large Area Engineered Substrates.
6. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates
7. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments
8. Hexagonal boron nitride particles for determining the thermal conductivity of diamond films based on near-ultraviolet micro-Raman mapping
9. Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes.
10. Review--Theory and Characterization of Doping and Defects in β-Ga2O3.
11. Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (-201) Bulk β-Ga2O3.
12. Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3.
13. Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices.
14. Cheap Ultra-Wide Bandgap Power Electronics? Gallium Oxide May Hold the Answer.
15. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition
16. In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene–metal interface
17. High Voltage GaN Lateral Photoconductive Semiconductor Switches.
18. Ultraviolet detector based on graphene/SiC heterojunction
19. Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs
20. Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga2O3 Micro-Flake.
21. Dry Etching of High Aspect Ratio 4H-SiC Microstructures.
22. Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga2O3.
23. Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3.
24. A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance.
25. (Invited) NiO/ β-(AlxGa1-x)2O3 /Ga2O3 Heterojunction Lateral Rectifiers with Reverse Breakdown Voltage > 7kV.
26. Vertical GaN Junction Barrier Schottky Diodes.
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