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Two dimensional (2D) materials have generated enormous interest in various research fields in recent years due to their fascinating properties, such as atomic thickness, distinct structures and superior characteristics. In particular, electronic and optoelectronic devices based on 2D materials have been widely investigated, which is promising for the innovation of future nanoelectronics technology. Recently, the technique of laser processing 2D materials with the advantages of facile operation, versatility and low cost has been reported to enable the fabrication of diverse 2D material electronic and optoelectronic devices, such as field-effect transistors (FETs), p–n junction diodes, bipolar junction transistors (BJTs), inverters, memory devices, photodetectors, photovoltaic devices and light-emitting devices. Here, various interactions between lasers and 2D materials are introduced, such as direct writing processing, reduction, doping, phase transition engineering, thinning, oxidation and creating defects. The current advances in laser processing-assisted 2D material electronic and optoelectronic devices are reviewed. A comprehensive outlook on the future development of 2D material nanoelectronics/optoelectronics via laser processing is also presented.

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.

The remarkable in-plane anisotropy of anisotropic two-dimensional materials (ATDMs), such as black phosphorus (BP), ReS2, and ReSe2, provides a new degree of freedom for the design of novel orientation-based optical and electronic devices. Therefore, visualization of the anisotropy and determination of the crystal orientation (CO) of ATDMs is of fundamental importance. Herein, using a setup equipped with a non-polarized beam splitter, a four-dimensional anisotropic imaging technique (AIT) based on the anisotropic optical response of ATDMs was proposed, by which the COs of many different ATDMs on the same substrate could be efficiently (

Reduced graphene oxide (RGO) has prospective applications in many fields, including energy storage, printable electronics, and sensing. RGO can simply be obtained at low-cost by reducing graphene oxide (GO). However, how to entirely remove the oxygen-containing groups to yield high-quality graphene is still a great challenge. Here, we report that high-quality intrinsic graphene can be prepared by a simple triggered microwave reduction method under air conditions. The induced spectrum and diffusion processes of GO reduction indicated that high-quality graphene could be produced by strong arc discharge caused by aggregation of electrons at the junction between graphene and GO under microwave irradiation. During the reduction process, the oxygen atoms were removed and carbon atoms were rearranged simultaneously in the graphene lattice structures. In addition, other triggered sources, such as iron wires and paper clips, could also be used to prepare high-quality graphene using the same method. Overall, the triggered microwave reduction of GO provides a simple and low-cost route for large-scale production of high-quality graphene.