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A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing
- Source :
- Nanoscale Advances. 2:1733-1740
- Publication Year :
- 2020
- Publisher :
- Royal Society of Chemistry (RSC), 2020.
-
Abstract
- Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.
- Subjects :
- Photocurrent
Materials science
business.industry
Bipolar junction transistor
Doping
Transistor
General Engineering
Bioengineering
02 engineering and technology
General Chemistry
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Atomic and Molecular Physics, and Optics
0104 chemical sciences
Photodiode
law.invention
Nanoelectronics
law
Femtosecond
Optoelectronics
General Materials Science
0210 nano-technology
business
Common emitter
Subjects
Details
- ISSN :
- 25160230
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- Nanoscale Advances
- Accession number :
- edsair.doi...........11e5684714627c5a3c7eb4f83bb3bd75
- Full Text :
- https://doi.org/10.1039/d0na00201a