Search

Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 μm, a distance at least ten times longer than the diffusion length and only limited by the device size. Temperature-dependent measurement reveals the transition from the diffusion-limited regime at low temperature to the acoustic field-driven regime at elevated temperature. Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature. Excitons in 2D semiconductors suffer from a weak response to in-plane electric fields, inhibiting their transport beyond the diffusion length. Here, the authors demonstrate the directional, long-range transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves. [ABSTRACT FROM AUTHOR]

Transition-metal dichalcogenides such as WSe2 and MoS2 have electronic band structures that are ideal for hosting many exotic spin-orbit phenomena. Here we investigate the possibility to generate and modulate a giant Zeeman-type spin polarization in WSe2 under an external electric field. By tuning the perpendicular electric field applied to the WSe2 channel with an electric-double-layer transistor, we observe a systematic crossover from weak localization to weak anti-localization in magnetotransport. Our optical reflection measurements also reveal an electrically tunable exciton splitting. Using first-principles calculations, we propose that these are probably due to the emergence of a merely out-of-plane and momentum-independent spin splitting at and in the vicinity of the vertices of the WSe2 Brillouin zone under electric field. The non-magnetic approach for creating such an intriguing spin splitting keeps the system time-reversally invariant, thereby suggesting a new method for manipulating the spin degrees of freedom of electrons. [ABSTRACT FROM AUTHOR]

Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time-reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain two-dimensional electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we investigate this possibility using polarization-resolved photoluminescence of bilayer MoS2, which has the same symmetry as bilayer graphene but has a bandgap in the visible spectrum allowing direct optical probing. We find that in bilayer MoS2 the circularly polarized photoluminescence can be continuously tuned from −15% to 15% as a function of gate voltage, whereas in structurally non-centrosymmetric monolayer MoS2 the photoluminescence polarization is gate independent. The observations are well explained as resulting from the continuous variation of orbital magnetic moments between positive and negative values through symmetry control. [ABSTRACT FROM AUTHOR]

By first-principles calculations, we investigate the geometric stability, electronic and optical properties of the type-II PN-WSe2 and type-I PAs-WSe2 van der Waals heterostructures(vdWH). They are p-type semiconductors with indirect band gaps of 1.09 eV and 1.08 eV based on PBE functional respectively. By applying the external gate field, the PAs-WSe2 heterostructure would transform to the type-II band alignment from the type-I. With the increasing of magnitude of the electric field, two heterostructures turn into the n-type semiconductors and eventually into metal. Especially, PN/PAs-WSe2 vdWH are both high refractive index materials at low frequencies and show negative refractive index at high frequencies. Because of the steady absorption in ultraviolet region, the PAs-WSe2 heterostructure is a highly sensitive UV detector material with wide spectrum. The type-II PN-WSe2 heterostructure possesses giant and broadband absorption in the near-infrared and visible regions, and its solar power conversion efficiency of 13.8% is higher than the reported GaTe–InSe (9.1%), MoS2/p-Si (5.23%) and organic solar cells (11.7%). It does project PN-WSe2 heterostructure a potential for application in excitons-based solar cells. [ABSTRACT FROM AUTHOR]

Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time-reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain two-dimensional electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we investigate this possibility using polarization-resolved photoluminescence of bilayer MoS2, which has the same symmetry as bilayer graphene but has a bandgap in the visible spectrum allowing direct optical probing. We find that in bilayer MoS2 the circularly polarized photoluminescence can be continuously tuned from −15% to 15% as a function of gate voltage, whereas in structurally non-centrosymmetric monolayer MoS2 the photoluminescence polarization is gate independent. The observations are well explained as resulting from the continuous variation of orbital magnetic moments between positive and negative values through symmetry control. [ABSTRACT FROM AUTHOR]