1. Colossal permittivity, low dielectric loss, and good thermal stability achieved in Ta-doped BaTiO3 by B-site defect engineering.
- Author
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Huang, Chu, Meng, Yingzhi, Li, Chenlin, Wang, Dawei, Chen, Xue, Sun, Lixian, Peng, Biaolin, Lei, Xiuyun, Shen, Yufang, and Liu, Laijun
- Abstract
High-performance colossal permittivity (ε′ > 10
4 ) plays an indispensable role in the development of electronic field. In this work, ultra-high dielectric permittivity (ε′ > 237, 294 @1 kHz) and low dielectric loss (0.012 @1 kHz) were simultaneously achieved in Ta-doped BaTi0.995 Ta0.005 O3 ceramics. Importantly, the dielectric permittivity changes less than 15% between − 55 and 200 °C, and the dielectric loss is less than 0.04. The excellent giant dielectric performance is related to the defect dipoles of electronic pins associated with electrons/oxygen vacancies/Ti3+ , which are generated by B-site donor. And the thermal-activated short-range hopping of electrons is conformed to be the origin of low dielectric losses and excellent thermal stability. This work provides a strategy for achieving ultra-high dielectric permittivity, low dielectric loss, and excellent temperature stability of Ta-doped BaTiO3 simultaneously through B-site defect engineering. [ABSTRACT FROM AUTHOR]- Published
- 2023
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