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Electrically pumped metal-cavity nanolasers in III-V semiconductors are promising for their application in optical interconnects, where high integration density and low optical powers are required. They offer a low threshold current and excellent cooling properties due to the metal encapsulation. In this contribution, an overview about the technology required for the fabrication of a nanolaser coupled to an InP-membrane waveguide on silicon is presented. A variety of techniques are used including electron-beam lithography, dry and wet etching, as well as deposition of dielectrics and metals. The technological challenges to fabricate such a complex nanostructure are also discussed.

The InP Membrane on Silicon (IMOS) generic technology promises high index contrast photonic integrated circuits. To make this a reality fabrication of an electrically pumped twin-guide laser is pursued. In this paper, one of the bottle-necks for the processing is discussed, the planarization step and subsequent etch-back. Benzocyclobutene (BCB) is used to planarize SOA structures before contacting. Complete curing of BCB at 280oC creates uniformity issues during etch-back. To mitigate this, a partial cure at 180oC before the etch-back and a complete cure afterwards is performed. Experiments show repeatability and reproducibility. Good uniformity after etch-back is found.

We are developing a generic integration platform for Fhoto,iic Integrated Circuits with a target wavelength of2 pm. The platform is based on the platform process .for 1.55 pm which supports monolithic integration of a wide range of passive and active components as anipl~fiers, modulators and detectors. In this paper we discuss the extension to longer wavelengths and its impact on the performance of the passive components. supported by initial characterization results of the waveguide loss and an Arrayed Waveguide Grating in a wavelength windowfrom 1.88 to 2 pm.