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Your search keyword '"Bhoolokam, A."' showing total 4 results
Start Over Author "Bhoolokam, A." Publisher the electrochemical society
4 results on '"Bhoolokam, A."'

2. Medium Frequency Physical Vapor Deposited Al2O3and SiO2as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

Author

Adrian Chasin, Joris Maas, Manoj Nag, Ajay Bhoolokam, Jan Genoe, Soeren Steudel, Paul Heremans, Guido Groeseneken, and Mitsuhiro Murata

Subjects
Materials science, Amorphous indium gallium zinc oxide, business.industry, Transistor, Hydrogen content, Medium frequency, Electronic, Optical and Magnetic Materials, law.invention, Ion, Thin-film transistor, law, Plasma-enhanced chemical vapor deposition, Optoelectronics, business, Layer (electronics)
Abstract

In this work, we report on amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with medium frequency physical vapor deposited (mf-PVD) etch-stop-layer (ESL). TFT with mf-PVD ESL show comparable characteristics such as fieldeffect mobility (μFE), sub-threshold slope (SS−1) and current ratio (ION/OFF) to the conventional plasma enhanced chemical vapor deposition (PECVD) ESL based TFT, however significant differences were observed in gate bias-stress stabilities. The TFTs with mf-PVD ESL showed lower threshold-voltage (VTH) shifts compared to TFTs with PECVD ESL when stressed under a gate field of +/−1 MV/cm for duration of 104 seconds in dark and light conditions. We associate the better bias-stress stability of the mf-PVD ESL based TFT to better passivating properties and the low hydrogen content of the mf-PVD layer compared to PECVD layer.

Published
2015
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