1. Two-photon absorption and non-resonant electronic nonlinearities of layered semiconductor TlGaS2
- Author
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Wangwei Hui, Xin Zhao, Xiao-Qing Yan, Zhi-Bo Liu, Fang Liu, Jianguo Tian, Xiao-Guang Gao, and Xiufeng Xin
- Subjects
Kerr effect ,Materials science ,business.industry ,Physics::Optics ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Two-photon absorption ,Atomic and Molecular Physics, and Optics ,Optical heterodyne detection ,010309 optics ,Optics ,Mode-locking ,0103 physical sciences ,Ultrafast laser spectroscopy ,Optoelectronics ,Photonics ,0210 nano-technology ,business ,Absorption (electromagnetic radiation) ,Refractive index - Abstract
The ultrafast nonlinear optical properties of bulk TlGaS2 crystal, a semiconductor with a layered structure, are studied by combining intensity dependent transmission, time-resolved transient absorption, and optical Kerr effect coupled to optical heterodyne detection. TlGaS2 demonstrates obvious two-photon absorption and electronic nonlinearities at 800 nm. The two-photon absorption coefficient and the nonlinear refractive index are determined to be of the order of 10−10 cm/W and 10−14 cm2/W, respectively. Furthermore, both the real and imaginary parts of the complex third-order susceptibility tensor elements are extracted. The large ultrafast optical nonlinearities make TlGaS2 a promising material for application in photonic techniques.
- Published
- 2018
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