1. Decoupling of epitaxy-related trapping effects in AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors
- Author
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Gilberto Curatola, Martin E. Huber, Alberta Bonanni, Gianmauro Pozzovivo, Ingo Daumiller, Lauri Knuuttila, Marco Silvestri, and Anders Lundskog
- Subjects
Photoluminescence ,Materials science ,02 engineering and technology ,Trapping ,Epitaxy ,01 natural sciences ,Molecular physics ,law.invention ,law ,0103 physical sciences ,Materials Chemistry ,Electrical and Electronic Engineering ,010302 applied physics ,business.industry ,Transistor ,Doping ,Surfaces and Interfaces ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,Semiconductor ,0210 nano-technology ,business ,Luminescence - Abstract
The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabilities in the threshold voltage (V$_{\mathrm{th}}$ shift). Secondary ion mass spectroscopy, steady-state photoluminescence (PL) measurements have been performed in conjunction with electrical characterization. The device dynamic performance is found to be significantly dependent on both the C concentration close to the channel as well as on the distance between the channel and the higher doped C region. Additionally, we note that experiments studying trapping should avoid large variations in the sheet carrier density (N$_{\mathrm{s}}$). This change in the N$_{\mathrm{s}}$ itself has a significant impact on the V$_{\mathrm{th}}$ shift. This experimental trends are also supported by a basic model and device simulation. Finally, the relationship between the yellow luminescence (YL) and the band edge (BE) ratio and the V$_{\mathrm{th}}$ shift is investigated. As long as the basic layer structure is not changed, the YL/BE ratio obtained from steady-state PL is demonstrated to be a valid method in predicting trap concentrations in the GaN channel layer.
- Published
- 2016
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